PL EN


Preferences help
enabled [disable] Abstract
Number of results
2014 | 125 | 4 | 991-993
Article title

Focused Ion Beam Imaging of Defects in Multicrystalline Si for Photovoltaic Application

Content
Title variants
Languages of publication
EN
Abstracts
EN
We demonstrate the imaging of the extended defects in Si materials using a focused ion beam instrument. Since Ga-ion beam has small penetration depth and high channeling character compared with electron beam, the secondary electron signal of focused ion beam is more sensitive to the surface morphology and crystallinity. We have tried to use this secondary electron imaging of focused ion beam for observation of various extended defects in Si materials for photovoltaic and semiconductor devices. As for the texture of multicrystalline Si, some grains are imaged darker than the others. It suggests that the crystal orientation gives different channeling effect on the primary Ga-ion beam, resulting in the different secondary electron yield. The grain boundaries and lineage in multicrystalline Si are shown as bright lines and patterns in the image. Although it may reflect the surface morphologies, these contrasts may be attributed to the channeling contrast due to lattice displacement or distortion. The contrast mechanism of FIB imaging is discussed.
Keywords
EN
Year
Volume
125
Issue
4
Pages
991-993
Physical description
Dates
published
2014-04
References
  • [1] M.W. Phanehf, Micron 30, 277 (1999), doi: 10.1016/S0968-4328(99)00012-8
  • [2] J. Li, Mater. Lett. 62, 804 (2008), doi: 10.1016/j.matlet.2007.06.065
  • [3] D.L. Barr, W.L. Brown, J. Vac. Sci. Technol. B 13, 2580 (1995), doi: 10.1116/1.588027
  • [4] T. Suzuki, N. Endo, M. Shibata, S. Kamasaki, T. Ichinokawa, J. Vac. Sci. Technol. A 22, 49 (2004), doi: 10.1116/1.1626646
  • [5] M.D. Uchic, M.A. Groeber, D.M. Dimiduk, J.P. Simmons, Scr. Mater. 55, 23 (2006), doi: 10.1016/j.scriptamat.2006.02.039
  • [6] K. Arafune, E. Ohishi, H. Sai, Y. Ohshita, M. Yamaguchi, J. Cryst. Growth 308, 5 (2007), doi: 10.1016/j.jcrysgro.2007.06.035
  • [7] K. Jiptner, M. Fukuzawa, Y. Miyamura, H. Harada, K. Kakimoto, T. Sekiguchi, Phys. Status Solidi C 10, 141 (2013), doi: 10.1002/pssc.201200884
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv125n459kz
Identifiers
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.