Electroluminescence Investigation of the Lateral Field Distribution in AlGaN/GaN HEMTs for Power Applications

• Authors: M. Baeumler , V. Polyakov , F. Gütle , M. Dammann , F. Benkhelifa , P. Waltereit , R. Reiner , S. Müller , M. Wespel , R. Quay , M. Mikulla , J. Wagner , O. Ambacher
• Languages of publication: EN

Abstracts

EN

The lifetime and stability of AlGaN/GaN heterostructure field effect transistors at high power levels can be enhanced by introducing field plates to reduce electric field peaks in the gate-drain region. Simulations of the electric field distribution along the channel using the 2D ATLAS software from Silvaco indicate that above a characteristic drain source voltage three spatially separated electric field peaks appear, one located at the drain-side edge of the gate foot, one at the end of the drain-sided gate field plate, and one at the end of the source shield field plate. The close correlation between lateral electric field and the electroluminescence due to hot electron related intra-band transitions can be very helpful when optimizing the electric field distribution in high power devices. Electroluminescence microscopy images of devices with gate and source shield field plate reveal the peaks located at the locations of enhanced electric field. By studying the voltage dependence of the electroluminescence peaks the influence of the field plates on the electric field distribution in source drain direction can be visualized.

Keywords

EN

78.60.Fi; 85.30.De; 85.30.Tv; 85.40.Bh; 85.40.Qx; 73.40.-c; 73.90.+f; 73.61.Ey; 73.50.Mx

Discipline

• 73.40.-c: Electronic transport in interface structures
• 85.40.Bh: Computer-aided design of microcircuits; layout and modeling
• 85.30.De: Semiconductor-device characterization, design, and modeling
• 78.60.Fi: Electroluminescence
• 85.30.Tv: Field effect devices
• 73.61.Ey: III-V semiconductors
• 73.90.+f: Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (Restricted to new topics in section 73)
• 73.50.Mx: High-frequency effects; plasma effects
• 85.40.Qx: Microcircuit quality, noise, performance, and failure analysis

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 4
• Pages: 982-985

Dates

published

2014-04

Contributors

author

M. Baeumler

• Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastr. 72, 79108 Freiburg, Germany

author

V. Polyakov

• Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastr. 72, 79108 Freiburg, Germany

author

F. Gütle

• Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastr. 72, 79108 Freiburg, Germany

author

M. Dammann

• Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastr. 72, 79108 Freiburg, Germany

author

F. Benkhelifa

• Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastr. 72, 79108 Freiburg, Germany

author

P. Waltereit

• Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastr. 72, 79108 Freiburg, Germany

author

R. Reiner

• Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastr. 72, 79108 Freiburg, Germany

author

S. Müller

• Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastr. 72, 79108 Freiburg, Germany

author

M. Wespel

• Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastr. 72, 79108 Freiburg, Germany

author

R. Quay

• Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastr. 72, 79108 Freiburg, Germany

author

M. Mikulla

• Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastr. 72, 79108 Freiburg, Germany

author

J. Wagner

• Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastr. 72, 79108 Freiburg, Germany

author

O. Ambacher

• Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastr. 72, 79108 Freiburg, Germany

References

• [1] M. Dammann, H. Czap, J. Rüster, M. Baeumler, F. Gütle, P. Waltereit, F. Benkhelifa, R. Reiner, M. Cäsar, H. Konstanzer, S. Müller, R. Quay, M. Mikulla, O. Ambacher, in: IEEE Int. Integrated Reliability Workshop, IIRW 2012, Final Report, 2012, Stanford Sierra Conference Center, IEEE, Fallen Leaf Lake, CA, New York, 2012, p. 105, doi: 10.1109/IIRW.2012.6468930
• [2] M. Baeumler, F. Gütle, V. Polyakov, M. Cäsar, M. Dammann, H. Konstanzer, W. Pletschen, W. Bronner, R. Quay, P. Waltereit, M. Mikulla. O. Ambacher, F. Bourgeois, R. Bethash, K. Riepe, P.J. van der Wel, J. Klappe, T. Rödle, J. Electron. Mater. 39, 756 (2010), doi: 10.1007/s11664-010-1120-9
• [3] D.A. Cullen, D.J. Smith, A. Passaseo, V. Tasco, A. Stocco, M. Meneghini, G. Meneghesso, E. Zanoni, IEEE Trans. Dev. Mater. Reliab. 13, 126 (2013), doi: 10.1109/TDMR.2012.2221464
• [4] A. Zanandrea, E. Bahat-Treidel, F. Rampazzo, A. Stocco, M. Meneghini, E. Zanoni, O. Hilt, P. Ivo, J. Wuerf, G. Meneghesso, Microelectron. Reliab. 52, 2426 (2012), doi: 10.1016/j.microrel.2012.06.062
• [5] F. Gütle, M. Baeumler, M. Dammann, M. Cäsar, H. Walcher, P. Waltereit, W. Bronner, S. Müller, R. Kiefer, R. Quay, M. Mikulla, O. Ambacher, A. Graff, F. Altmann, M. Simon, Mater. Sci. Forum 725, 79 (2012), doi: 10.4028/www.scientific.net/MSF.725.79
• [6] R.J.T. Simms, F. Gao, Y. Pei, T. Palacios, U.K. Mishra, M. Kuball, Appl. Phys. Lett. 97, 033502 (2010), doi: 10.1063/1.3464959
• [7] F. Gütle, V.M. Polyakov, M. Baeumler, F. Benkhelifa, S. Müller, M. Dammann, M. Cäsar, R. Quay, M. Mikulla, J. Wagner, O. Ambacher, Semicond. Sci. Technol. 27, 125003 (2012) and Ref. therein, doi: 10.1088/0268-1242/27/12/125003
• [8] V. Palankovski, S. Vitanov, R. Quay, in: IEEE Electron Devices Society: IEEE Compound Semiconductor Integrated Circuit Symp., CSICS 2006, CD-ROM: San Antonio (Texas, USA), IEEE, Piscataway, NJ 2006, p. 107, doi: 10.1109/CSICS.2006.319926
• [9] J. Joh, F. Gao, T. Palacios, J.A. del Alamo, Microelectron. Reliab. 50, 767 (2010), doi: 10.1016/j.microrel.2010.02.015
• [10] J. Wuerfl, E. Bahat-Treidel, F. Brunner, E. Cho, O. Hilt, P. Ivo, A. Knauer, P. Kurpas, R. Lossy, M. Schulz, S. Singwald, M. Weyers, R. Zhytnytska, Microelectron. Reliab. 51, 1710 (2011), doi: 10.1016/j.microrel.2011.07.017
• [11] S.Y. Park, C. Floresca, U. Chowdhury, J.L. Jimenez, C. Lee, E. Beam, b, P. Saunier, T. Balistreri, M.J. Kim, Microelectron. Reliab. 49, 478 (2009), doi: 10.1016/j.microrel.2009.02.015
• [12] M. Dammann, M. Baeumler, F. Gütle, M. Cäsar, H. Walcher, P. Waltereit, W. Bronner, S. Müller, R. Kiefer, R. Quay, M. Mikulla, O. Ambacher, A. Graff, F. Altmann, in: IEEE Int. Integrated Reliability Workshop, IRW 2011, Final report, S. Lake Tahoe, California USA, 2011, IEEE, Piscataway, NJ 2011, p. 42, doi: 10.1109/IIRW.2011.6142585
• [13] W. Saito, in: Proc. IEEE International Reliability Physics Symposium (IRPS 2011), IEEE, Monterey 2011, p. 418 and references therein, doi: 10.1109/IRPS.2011.5784510
• [14] ATLAS User's Manual 2005, Device Simulation Software, Silvaco International
• [15] M. Dammann, M. Baeumler, F. Gütle, M. Wespel, R. Reiner, V. Polyakov, P. Waltereit, R. Quay, M. Mikulla, O. Ambacher, Proc. 37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2013), Warnemünde, p. 190
• [16] D. Jin, J.A. del Alamo, in: Proc. 24th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), IEEE, Bruges 2012, p. 333, doi: 10.1109/ISPSD.2012.6229089
• [17] F. Benkhelifa, D. Krausse, S. Müller, R. Quay, M. Mikulla, O. Ambacher, in: Proc. 5th Space Agency-MOD (ESAMOD 2010), Round Table Workshop on GaN Component Technologies ESA, ESA Publications Division, Noordwijk 2010
• [18] K. Turvey, J. Allen, J. Phys. C 6, 2887 (1973) and references therein, doi: 10.1088/0022-3719/6/19/011
• [19] S. Ganguly, J. Verma, G.W. Li, T. Zimmermann, H.L. Xing, D. Jena, Appl. Phys. Lett. 99, 193504 (2011), doi: 10.1063/1.3658450
• [20] N. Onojima, M. Higashiwaki, J. Suda, T. Kimoto, T. Mimura, T. Matsui, J. Appl. Phys. 101, 043703 (2007), doi: 10.1063/1.2472255

Identifiers

DOI

10.12693/APhysPolA.125.982