Preferences help
enabled [disable] Abstract
Number of results
2014 | 125 | 4 | 982-985
Article title

Electroluminescence Investigation of the Lateral Field Distribution in AlGaN/GaN HEMTs for Power Applications

Title variants
Languages of publication
The lifetime and stability of AlGaN/GaN heterostructure field effect transistors at high power levels can be enhanced by introducing field plates to reduce electric field peaks in the gate-drain region. Simulations of the electric field distribution along the channel using the 2D ATLAS software from Silvaco indicate that above a characteristic drain source voltage three spatially separated electric field peaks appear, one located at the drain-side edge of the gate foot, one at the end of the drain-sided gate field plate, and one at the end of the source shield field plate. The close correlation between lateral electric field and the electroluminescence due to hot electron related intra-band transitions can be very helpful when optimizing the electric field distribution in high power devices. Electroluminescence microscopy images of devices with gate and source shield field plate reveal the peaks located at the locations of enhanced electric field. By studying the voltage dependence of the electroluminescence peaks the influence of the field plates on the electric field distribution in source drain direction can be visualized.
Physical description
  • [1] M. Dammann, H. Czap, J. Rüster, M. Baeumler, F. Gütle, P. Waltereit, F. Benkhelifa, R. Reiner, M. Cäsar, H. Konstanzer, S. Müller, R. Quay, M. Mikulla, O. Ambacher, in: IEEE Int. Integrated Reliability Workshop, IIRW 2012, Final Report, 2012, Stanford Sierra Conference Center, IEEE, Fallen Leaf Lake, CA, New York, 2012, p. 105, doi: 10.1109/IIRW.2012.6468930
  • [2] M. Baeumler, F. Gütle, V. Polyakov, M. Cäsar, M. Dammann, H. Konstanzer, W. Pletschen, W. Bronner, R. Quay, P. Waltereit, M. Mikulla. O. Ambacher, F. Bourgeois, R. Bethash, K. Riepe, P.J. van der Wel, J. Klappe, T. Rödle, J. Electron. Mater. 39, 756 (2010), doi: 10.1007/s11664-010-1120-9
  • [3] D.A. Cullen, D.J. Smith, A. Passaseo, V. Tasco, A. Stocco, M. Meneghini, G. Meneghesso, E. Zanoni, IEEE Trans. Dev. Mater. Reliab. 13, 126 (2013), doi: 10.1109/TDMR.2012.2221464
  • [4] A. Zanandrea, E. Bahat-Treidel, F. Rampazzo, A. Stocco, M. Meneghini, E. Zanoni, O. Hilt, P. Ivo, J. Wuerf, G. Meneghesso, Microelectron. Reliab. 52, 2426 (2012), doi: 10.1016/j.microrel.2012.06.062
  • [5] F. Gütle, M. Baeumler, M. Dammann, M. Cäsar, H. Walcher, P. Waltereit, W. Bronner, S. Müller, R. Kiefer, R. Quay, M. Mikulla, O. Ambacher, A. Graff, F. Altmann, M. Simon, Mater. Sci. Forum 725, 79 (2012), doi: 10.4028/
  • [6] R.J.T. Simms, F. Gao, Y. Pei, T. Palacios, U.K. Mishra, M. Kuball, Appl. Phys. Lett. 97, 033502 (2010), doi: 10.1063/1.3464959
  • [7] F. Gütle, V.M. Polyakov, M. Baeumler, F. Benkhelifa, S. Müller, M. Dammann, M. Cäsar, R. Quay, M. Mikulla, J. Wagner, O. Ambacher, Semicond. Sci. Technol. 27, 125003 (2012) and Ref. therein, doi: 10.1088/0268-1242/27/12/125003
  • [8] V. Palankovski, S. Vitanov, R. Quay, in: IEEE Electron Devices Society: IEEE Compound Semiconductor Integrated Circuit Symp., CSICS 2006, CD-ROM: San Antonio (Texas, USA), IEEE, Piscataway, NJ 2006, p. 107, doi: 10.1109/CSICS.2006.319926
  • [9] J. Joh, F. Gao, T. Palacios, J.A. del Alamo, Microelectron. Reliab. 50, 767 (2010), doi: 10.1016/j.microrel.2010.02.015
  • [10] J. Wuerfl, E. Bahat-Treidel, F. Brunner, E. Cho, O. Hilt, P. Ivo, A. Knauer, P. Kurpas, R. Lossy, M. Schulz, S. Singwald, M. Weyers, R. Zhytnytska, Microelectron. Reliab. 51, 1710 (2011), doi: 10.1016/j.microrel.2011.07.017
  • [11] S.Y. Park, C. Floresca, U. Chowdhury, J.L. Jimenez, C. Lee, E. Beam, b, P. Saunier, T. Balistreri, M.J. Kim, Microelectron. Reliab. 49, 478 (2009), doi: 10.1016/j.microrel.2009.02.015
  • [12] M. Dammann, M. Baeumler, F. Gütle, M. Cäsar, H. Walcher, P. Waltereit, W. Bronner, S. Müller, R. Kiefer, R. Quay, M. Mikulla, O. Ambacher, A. Graff, F. Altmann, in: IEEE Int. Integrated Reliability Workshop, IRW 2011, Final report, S. Lake Tahoe, California USA, 2011, IEEE, Piscataway, NJ 2011, p. 42, doi: 10.1109/IIRW.2011.6142585
  • [13] W. Saito, in: Proc. IEEE International Reliability Physics Symposium (IRPS 2011), IEEE, Monterey 2011, p. 418 and references therein, doi: 10.1109/IRPS.2011.5784510
  • [14] ATLAS User's Manual 2005, Device Simulation Software, Silvaco International
  • [15] M. Dammann, M. Baeumler, F. Gütle, M. Wespel, R. Reiner, V. Polyakov, P. Waltereit, R. Quay, M. Mikulla, O. Ambacher, Proc. 37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2013), Warnemünde, p. 190
  • [16] D. Jin, J.A. del Alamo, in: Proc. 24th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), IEEE, Bruges 2012, p. 333, doi: 10.1109/ISPSD.2012.6229089
  • [17] F. Benkhelifa, D. Krausse, S. Müller, R. Quay, M. Mikulla, O. Ambacher, in: Proc. 5th Space Agency-MOD (ESAMOD 2010), Round Table Workshop on GaN Component Technologies ESA, ESA Publications Division, Noordwijk 2010
  • [18] K. Turvey, J. Allen, J. Phys. C 6, 2887 (1973) and references therein, doi: 10.1088/0022-3719/6/19/011
  • [19] S. Ganguly, J. Verma, G.W. Li, T. Zimmermann, H.L. Xing, D. Jena, Appl. Phys. Lett. 99, 193504 (2011), doi: 10.1063/1.3658450
  • [20] N. Onojima, M. Higashiwaki, J. Suda, T. Kimoto, T. Mimura, T. Matsui, J. Appl. Phys. 101, 043703 (2007), doi: 10.1063/1.2472255
Document Type
Publication order reference
YADDA identifier
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.