X-Ray Topographic Study of a Homoepitaxial Diamond Layer on an Ultraviolet-Irradiated Precision Polished Substrate

• Authors: Y. Kato , H. Umezawa , S. Shikata
• Languages of publication: EN

Abstracts

EN

Suitable techniques for the growth of high-quality single-crystal diamond are needed in order to use single-crystal diamond in power devices. Because the ion plantation technique cannot be used for diamond doping, a drift layer and a conduction layer for a diamond power device were grown by chemical vapor deposition. An important challenge in this field is to reduce the dislocation density in the epitaxial layer. The dislocation density was found to increase during the chemical vapor deposition process. Because a defective surface is one cause of increased dislocation density, the use of a UV-polished substrate having no scratches due to mechanical polishing was investigated.

Keywords

EN

61.72.-y; 81.05.ug

Discipline

• 81.05.ug: Diamond
• 61.72.-y: Defects and impurities in crystals; microstructure(for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology; for effects of crystal defects and doping on superconducting transition temperature, see 74.62.Dh)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 4
• Pages: 969-971

Dates

published

2014-04

Contributors

author

Y. Kato

• Advanced Industrial Science and Technology (AIST), Ikeda, Osaka 563-8577, Japan

author

H. Umezawa

• Advanced Industrial Science and Technology (AIST), Ikeda, Osaka 563-8577, Japan

author

S. Shikata

• Advanced Industrial Science and Technology (AIST), Ikeda, Osaka 563-8577, Japan

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Identifiers

DOI

10.12693/APhysPolA.125.969