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2014 | 125 | 4 | 969-971
Article title

X-Ray Topographic Study of a Homoepitaxial Diamond Layer on an Ultraviolet-Irradiated Precision Polished Substrate

Content
Title variants
Languages of publication
EN
Abstracts
EN
Suitable techniques for the growth of high-quality single-crystal diamond are needed in order to use single-crystal diamond in power devices. Because the ion plantation technique cannot be used for diamond doping, a drift layer and a conduction layer for a diamond power device were grown by chemical vapor deposition. An important challenge in this field is to reduce the dislocation density in the epitaxial layer. The dislocation density was found to increase during the chemical vapor deposition process. Because a defective surface is one cause of increased dislocation density, the use of a UV-polished substrate having no scratches due to mechanical polishing was investigated.
Keywords
EN
Year
Volume
125
Issue
4
Pages
969-971
Physical description
Dates
published
2014-04
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv125n454kz
Identifiers
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