Observations of Overlapped Single Shockley Stacking Faults in 4H-SiC PiN Diode

• Authors: K. Nakayama , T. Hemmi , K. Asano , T. Miyazawa , H. Tsuchida
• Languages of publication: EN

Abstracts

EN

In 4H-SiC PiN diodes, Shockley-type stacking faults expand from basal plane dislocations under conducting forward current. We report for the first time overlapped single Shockley-type stacking faults in a 4H-SiC PiN diode after forward conduction. In photoluminescence measurements, we observed not only an emission peak at 425 nm, which corresponds to the single Shockley-type stacking fault, but also one at 432 nm. In cross-sectional cathode luminescence images, emission lines at 425 nm and 432 nm merge and become straight. Transmission electron microscope images showed that the structure at the position with the 432 nm emission overlapped the single Shockley-type stacking faults.

Keywords

EN

81.05.Hd

Discipline

• 81.05.Hd: Other semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 4
• Pages: 962-964

Dates

published

2014-04

Contributors

author

K. Nakayama

• Power Engineering R&D Center, Kansai Electric Power Co., Inc. 3-11-20 Nakoji, Amagasaki, Hyogo 661-0974, Japan

author

T. Hemmi

• Power Engineering R&D Center, Kansai Electric Power Co., Inc. 3-11-20 Nakoji, Amagasaki, Hyogo 661-0974, Japan

author

K. Asano

• Power Engineering R&D Center, Kansai Electric Power Co., Inc. 3-11-20 Nakoji, Amagasaki, Hyogo 661-0974, Japan

author

T. Miyazawa

• Materials Science Research Laboratory, Central Research Institute of Electric Power Industry 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan

author

H. Tsuchida

• Materials Science Research Laboratory, Central Research Institute of Electric Power Industry 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan

References

• [1] I. Kamata, X. Zhang, H. Tsuchida, Appl. Phys. Lett. 97, 172107 (2010), doi: 10.1063/1.3499431
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• [3] M. Ito, L. Storasta, H. Tsuchida, Appl. Phys. Expr. 1, 015001 (2008), doi: 10.1143/APEX.1.015001
• [4] Y. Chen, M. Dudley, K.X. Liu, R.E. Stahlbush, Appl. Phys. Lett. 90, 171930 (2007), doi: 10.1063/1.2734499

Identifiers

DOI

10.12693/APhysPolA.125.962