Defects Studies of ZnO Single Crystals Prepared by Various Techniques

• Authors: F. Lukáč , J. Čížek , I. Procházka , O. Melikhova , W. Anwand , G. Brauer
• Languages of publication: EN

Abstracts

EN

The aim of the present work was a comparison of defects in ZnO crystals grown by various techniques available nowadays, namely hydrothermal growth, pressurized melt, Bridgman method growth and vapor phase growth. Positron annihilation spectroscopy was employed as a principal tool for characterization of defects in ZnO crystals grown by above mentioned various techniques. ZnO crystals can be divided into two groups: (i) hydrothermal grown crystals, which exhibit positron lifetime of 179-182 ps and (ii) ZnO crystals grown by the other techniques (pressurized melt, Bridgman method, vapor phase growth) which are characterized by the lower lifetimes falling in the range of 160-173 ps. Comparison of experimental data with ab initio theoretical calculations revealed that HT grown ZnO crystals contains Zn vacancies associated with hydrogen atom in a bond-centered site. On the other hand, ZnO crystals prepared by other techniques contain most probably stacking faults created by stresses induced by temperature gradients in the melt.

Keywords

EN

78.70.Bj; 61.72.J-

Discipline

• 78.70.Bj: Positron annihilation(for positron states, see 71.60.+z in electronic structure of bulk materials; for positronium chemistry, see 82.30.Gg in physical chemistry and chemical physics)
• 61.72.J-: Point defects and defect clusters

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 3
• Pages: 748-751

Dates

published

2014-03

Contributors

author

F. Lukáč

• Charles University in Prague, Faculty of Mathematics and Physics V Holešovičkách 2, 180 00 Praha 8, Czech Republic

author

J. Čížek

• Charles University in Prague, Faculty of Mathematics and Physics V Holešovičkách 2, 180 00 Praha 8, Czech Republic

author

I. Procházka

• Charles University in Prague, Faculty of Mathematics and Physics V Holešovičkách 2, 180 00 Praha 8, Czech Republic

author

O. Melikhova

• Charles University in Prague, Faculty of Mathematics and Physics V Holešovičkách 2, 180 00 Praha 8, Czech Republic

author

W. Anwand

• Institut für Strahlenphysik, Forschungszentrum Dresden-Rossendorf, Postfach 510119, D-01314 Dresden, Germany

author

G. Brauer

• Institut für Strahlenphysik, Forschungszentrum Dresden-Rossendorf, Postfach 510119, D-01314 Dresden, Germany

References

• [1] A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S.F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, M. Kawasaki, Nature Mater. 4, 42 (2005), doi:10.1038/nmat1284
• [2] S. Pearton, D. Norton, K. Ip, Y. Heo, T. Steiner, Prog. Mater. Sci. 50, 293 (2005), doi:10.1016/j.pmatsci.2004.04.001
• [3] M. McCluskey, S. Jokela, J. Appl. Phys. 106, 071101 (2009), doi:10.1063/1.3216464
• [4] P. Hautojärvi, Positrons in Solids, Springer-Verlag, Berlin 1979
• [5] F. Tuomisto, D.C. Look, Proc. SPIE 6474, 647413 (2007), doi:10.1117/12.698902
• [6] Z.Q. Chen, A. Kawasuso, Y. Xu, H. Naramoto, X.L. Yuan, T. Sekiguchi, R. Suzuki, T. Ohdaira, Phys. Rev. B 71, 115213 (2005), doi:10.1103/PhysRevB.71.115213
• [7] A. Sarkar, M. Chakrabarti, S.K. Ray, D. Bhowmick, D. Sanyal, J. Phys., Condens. Matter 23, 155801 (2011), doi:10.1088/0953-8984/23/15/155801
• [8] G. Brauer, W. Anwand, D. Grambole, J. Grenzer, W. Skorupa, J. Čížek, J. Kuriplach, I. Procházka, C.C. Ling, C.K. So, D. Schulz, D. Klimm, Phys. Rev. B 79, 115212 (2009), doi:10.1103/PhysRevB.79.115212
• [9] S. Brunner, W. Puff, A. Balogh, P. Mascher, Mater. Sci. Forum 363, 141 (2001), doi:10.4028/www.scientific.net/MSF.363-365.141
• [10] F. Bečvář, J. Čížek, I. Procházka, J. Janotová, Nucl. Instrum. Methods., Phys. Res. A 539, 372 (2005), doi:10.1016/j.nima.2004.09.031
• [11] I. Procházka, I. Novotný, F. Bečvář, Mater. Sci. Forum 255-257, 772 (1997)
• [12] W. Anwand, H.R. Kissener, G. Brauer, Acta Phys. Pol. A 88, 7 (1995)
• [13] H. Takenaka, D.J. Singh, Phys. Rev. B 75, 241102 (2007), doi:10.1103/PhysRevB.75.241102
• [14] G. Brauer, W. Anwand, W. Skorupa, J. Kuriplach, O. Melikhova, C. Moisson, H. von Wenckstern, H. Schmidt, M. Lorenz, M. Grundmann, Phys. Rev. B 74, 045208 (2006), doi:10.1103/PhysRevB.74.045208
• [15] W. Anwand, G. Brauer, R.I. Grynszpan, T.E. Cowan, D. Schulz, D. Klimm, J. Čížek, J. Kuriplach, I. Procházka, C.C. Ling, A.B. Djurisĭć, V. Klemm, G. Schreiber, D. Rafaja, J. Appl. Phys. 109, 063516 (2011)
• [16] A. van Veen, H. Schut, M. Clement, J.M.M. de Nijs, A. Kruseman, M.R. Ijpma, Appl. Surf. Sci. 85, 216 (1995), doi:10.1016/0169-4332(94)00334-3
• [17] J. Bardeen, W. Shockley, Phys. Rev. B 80, 72 (1950)
• [18] M.J. Puska, R.M. Nieminen, Rev. Mod. Phys. 66, 841 (1994), doi:10.1103/RevModPhys.66.841
• [19] K. Sarasamak, S. Limpijumnong, W.R.L. Lambrecht, Phys. Rev. B 82, 035201 (2010), doi:10.1103/PhysRevB.82.035201
• [20] J. Wrzesinski, D. Fröhlich, Phys. Rev. B 56, 13087 (1997), doi:10.1103/PhysRevB.56.13087
• [21] R. Krause-Rehberg, H. Leipner, Positron Annihilation in Semiconductors - Defect Studies, Springer, Berlin 1999
• [22] A. van Veen, H. Schut, J. de Vries, R.A. Hakvoort, M.R. Ijpma, AIP Conf. Proc. 218, 83 (1990)
• [23] R. West, in: Positrons in Solids, Ed. P. Hautojärvi, Springer-Verlag, Berlin 1979, p. 89
• [24] J. Čížek, F. Lukáč, I. Procházka, R. Kužel, Y. Jirásková, D. Janičkovič, W. Anwand, G. Brauer, Physica B 407, 2659 (2012), doi:10.1016/j.physb.2011.12.122

Identifiers

DOI

10.12693/APhysPolA.125.748