Study of Oxide-Dispersion-Strengthened Ferritic Steels after Ion Implantation

• Authors: J. Simeg Veternikova , E. Korhonen , M. Skarba , J. Degmova , V. Sabelova , S. Sojak , V. Slugen
• Languages of publication: EN

Abstracts

EN

This paper is focused on four different commercial oxide-dispersion-strengthened ferritic steels (MA 956, ODM 751, MA 957 and ODS Eurofer) with different chromium content and the change of their microstructure after helium ion implantation. The samples were implanted with kinetic energy of ions up to 500 keV and the implantation depth was up to 1.2 μm. The implantation was performed at Institute of Nuclear and Physical Engineering, Slovak University of Technology in Bratislava. The samples were observed prior and after the implantation by positron Doppler broadening spectroscopy with slow positron beam (energy up to 36 keV) which is one of the most suitable techniques due to its sensitivity to surface and subsurface layers up to 1.6 μm. The results showed visible change of defect presence in all samples and defect depth profiles are in a good accordance with SRIM software calculations displaying the Bragg peak. According to measured data, ODS Eurofer (9% Cr) seems to be the most radiation resistant from the group of all investigated steels and MA 956 (20% Cr) as the most radiation affected steel.

Keywords

EN

61.72.-y; 68.55.Ln; 61.72.J-

Discipline

• 61.72.J-: Point defects and defect clusters
• 61.72.-y: Defects and impurities in crystals; microstructure(for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology; for effects of crystal defects and doping on superconducting transition temperature, see 74.62.Dh)
• 68.55.Ln: Defects and impurities: doping, implantation, distribution, concentration, etc.(for diffusion of impurities, see 66.30.J-)

• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 3
• Pages: 741-743

Dates

published

2014-03

Contributors

author

J. Simeg Veternikova

• Institute of Nuclear and Physical Engineering, Faculty of Electrical Engineering and Information Technology Slovak University of Technology, Ilkovicova 3, 812 19 Bratislava, Slovakia

author

E. Korhonen

• Departments of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto, Finland

author

M. Skarba

• Institute of Materials Science, Faculty of Material Science and Technology, Slovak University of Technology Bottova 25, 917 24 Trnava, Slovakia

author

J. Degmova

• Institute of Nuclear and Physical Engineering, Faculty of Electrical Engineering and Information Technology Slovak University of Technology, Ilkovicova 3, 812 19 Bratislava, Slovakia

author

V. Sabelova

• Institute of Nuclear and Physical Engineering, Faculty of Electrical Engineering and Information Technology Slovak University of Technology, Ilkovicova 3, 812 19 Bratislava, Slovakia

author

S. Sojak

• Institute of Nuclear and Physical Engineering, Faculty of Electrical Engineering and Information Technology Slovak University of Technology, Ilkovicova 3, 812 19 Bratislava, Slovakia

author

V. Slugen

• Institute of Nuclear and Physical Engineering, Faculty of Electrical Engineering and Information Technology Slovak University of Technology, Ilkovicova 3, 812 19 Bratislava, Slovakia

References

• [1] D.S. Gelles, J. Nucl. Mater. 233-237, 293 (1966), doi:10.1016/S0022-3115(96)00222-X
• [2] B. Kazimierzak, M. Prignon, Ch. Lecomte-Mertens, D. Coutsouradis, Anti-Corr. Meth. Mater. 37, 4 (1990), doi:10.1108/eb007280
• [3] P. Horodek, J. Dryzek, M. Wrobel, Tribol Lett. 45, 341 (2012), doi:10.1007/s11249-011-9890-7
• [4] G. Binning, U.S. Patent No. 4,724,318 (1988)
• [5] G. Kinchin, R. Pease, Rep. Prog. Phys. 18, 1 (1955), doi:10.1088/0034-4885/18/1/301
• [6] J.F. Ziegler, M.D. Ziegler, J.P. Biersack, Nucl. Instrum. Methods Phys. Res. B 268, 1818 (2010), doi:10.1016/j.nimb.2010.02.091
• [7] R.K. Willardson, E.R. Weber, M. Stavola, Identification of Defects in Semiconductors, Academic Press, Hardbound 1998, p. 376
• [8] J. Oila, V. Ranki, J. Kivioja, K. Saarinen, P. Hautojaervi, Appl. Surf. Sci. 194, 38 (2002), doi:10.1016/S0169-4332(02)00085-5
• [9] R. Krause-Rehberg, S.H. Leipner, Positron Annihilation in Semiconductors, Springer, Berlin 1998
• [10] V. Slugen, J. Veternikova, S. Kilpelainen, F. Tuomisto, Phys. Proc. 35, 28 (2012), doi:10.1016/j.phpro.2012.06.018

Identifiers

DOI

10.12693/APhysPolA.125.741