Plasma Electrolytic Oxidation of Binary Al-Sn Alloys

• Authors: Y. Gencer , M. Tarakci , A. Gulec , Z. Cagatay Oter
• Languages of publication: EN

Abstracts

EN

Binary Al-Sn (1, 2, 4, 6, 8 at.% Sn) synthetic alloys were prepared under vacuum-atmosphere controlled furnace. The Al-Sn alloys were coated by plasma electrolytic oxidation technique for 120 min in aqueous electrolyte containing sodium silicate and potassium hydroxide using the same electrical parameters. The microstructure, surface roughness, phase content and chemical composition of the coatings were characterized by scanning electron microscopy, profilometry and X-ray diffractometry. The coating became porous while coating thickness and surface roughness decreased, with increasing amount of Sn content in Al-Sn alloys. The coating was not formed on the Al-Sn alloy with 8 at.% Sn. Plasma electrolytic oxidation coatings were composed of mainly mullite (3Al_2O_3 ·2SiO_2), γ-Al_2O_3 and α-Al_2O_3 up to 4 at.% Sn. The α-Al_2O_3 phase formed as precipitate in the inner region of the coating and its amount decreased with Sn amount in the Al-Sn alloys. The SnO_2 phase was only detected in the coating of Al-6Sn alloy. Scanning electron microscopy - energy dispersive X-ray spectroscopy results showed that the traces of Sn were evident in the oxide coating along with Al, O, Si, Na, and K. The increasing addition of Sn in the alloys resulted in reduction of the overall microhardness of the coating with decreasing manner from dense inner region to the surface of the coatings.

Keywords

EN

81.15.-z; 81.05.Bx

Discipline

• 81.05.Bx: Metals, semimetals, and alloys
• 81.15.-z: Methods of deposition of films and coatings; film growth and epitaxy(for structure of thin films, see 68.55.-a; see also 85.40.Sz Deposition technology in microelectronics; for epitaxial dielectric films, see 77.55.Px)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 2
• Pages: 659-663

Dates

published

2014-02

Contributors

author

Y. Gencer

• Gebze Institute of Technology, Department of Materials Science and Engineering, 41400 Gebze, Kocaeli, Turkey

author

M. Tarakci

• Gebze Institute of Technology, Department of Materials Science and Engineering, 41400 Gebze, Kocaeli, Turkey

author

A. Gulec

• Gebze Institute of Technology, Department of Materials Science and Engineering, 41400 Gebze, Kocaeli, Turkey

author

Z. Cagatay Oter

• Gebze Institute of Technology, Department of Materials Science and Engineering, 41400 Gebze, Kocaeli, Turkey

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Identifiers

DOI

10.12693/APhysPolA.125.659