Noise Response and Stability in Injection Locked Semiconductor Ring Laser

• Authors: M. Memon , H. Fathallah
• Languages of publication: EN

Abstracts

EN

Stability and effects of optical injection locking in semiconductor ring laser is modeled in detail. It is verified that the injection locking in slave semiconductor ring laser depends on detuning frequency and external optical injection ratio between the master laser and the slave semiconductor ring laser. The stability of injection was locked using the resonance frequency and damping factor. The parasitic phase modulation response due to amplitude modulation (chirp response) is derived and simulated. Similarly parasitic amplitude modulation due to phase modulation response is also investigated.

Keywords

EN

42.55.Wd; 42.65.Re; 42.60.By; 42.65.Pc

Discipline

• 42.55.Wd: Fiber lasers
• 42.65.Pc: Optical bistability, multistability, and switching, including local field effects(see also 42.60.Gd Q-switching; 42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks)
• 42.60.By: Design of specific laser systems
• 42.65.Re: Ultrafast processes; optical pulse generation and pulse compression(for ultrafast spectroscopy, see 78.47.J-; for ultrafast magnetization dynamics, see 75.78.Jp)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 2
• Pages: 454-455

Dates

published

2014-02

Contributors

author

M. Memon

• Prince Sultan Advanced Technologies Research Institute (PSATRI), King Saud University, Riyadh, Saudi Arabia

author

H. Fathallah

• Prince Sultan Advanced Technologies Research Institute (PSATRI), King Saud University, Riyadh, Saudi Arabia

References

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Identifiers

DOI

10.12693/APhysPolA.125.454