Electrical Properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with Low Diameter

• Authors: B. Kucur , M. Ahmetoglu , I. Andreev , E. Kunitsyna , M. Mikhailova , Y. Yakovlev
• Languages of publication: EN

Abstracts

EN

GaInAsSb/GaSb/GaAlAsSb double heterostructures are attractive for optoelectronic devices working in the 1.5-4.8 μm wavelength region. In this paper, the current mechanisms of liquid phase epitaxy grown GaInAsSb based double heterostructures with 100 μm diameter were investigated in the temperature range 77-350 K. It was found that diffusion current dominates at the high temperature (> 240 K) and small forward bias region, while generation-recombination current dominates at intermediate temperatures (242-171 K). At low temperature region (< 171 K), the tunneling mechanism of the current flow dominates in both forward and reverse biases.

Keywords

EN

73.40.-c; 78.66.-w; 85.60.Dw

Discipline

• 73.40.-c: Electronic transport in interface structures
• 85.60.Dw: Photodiodes; phototransistors; photoresistors
• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 2
• Pages: 411-413

Dates

published

2014-02

Contributors

author

B. Kucur

• Department of Physics, Faculty of Sciences and Arts, Uludag University, 16059 Gorukle, Bursa, Turkey

author

M. Ahmetoglu

• Department of Physics, Faculty of Sciences and Arts, Uludag University, 16059 Gorukle, Bursa, Turkey

author

I. Andreev

• Ioffe Physical-Technical Institute RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia

author

E. Kunitsyna

• Ioffe Physical-Technical Institute RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia

author

M. Mikhailova

• Ioffe Physical-Technical Institute RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia

author

Y. Yakovlev

• Ioffe Physical-Technical Institute RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia

References

• 1. A.N. Baranov, N. Bertu, Y. Cumminal, G. Boissier, C. Alibert, A. Joullie, doi: 10.1063/1.119629, Appl. Phys. Lett. 71, 735 (1997)
• 2. J.R. Meyer, C.A. Hoffman, F.J. Bartoli, L.R. Ram-Mohan, doi: 10.1063/1.115216, Appl. Phys. Lett. 67, 757 (1995)
• 3. A.N. Baranov, D.E. Dzhurtanov, A.N. Imenkov, A.A. Rogachev, Yu.M. Shernyakov, Yu.P. Yakovlev, Sov. Phys. Semicond. 20, 1385 (1986)
• 4. I.A. Andreev, M.A. Afrailov, A.N. Baranov, S.G. Konnikov, M.A. Mirsagatov, M.P. Mikhailova, O.V. Salata, V.E. Umansky, G.M. Filaretova, Yu.P. Yakovlev, Sov. Phys. Tech. Lett. 15, 253 (1989)
• 5. M.A. Afrailov, A.N. Baranov, A.P. Dmitriev, M.P. Mikhailova, Yu.P. Smorchkova, I.N. Timchenko, V. Sherstnev, Yu. Yakovlev, I.N. Yassievich, Sov. Phys. Semicond. 24, 8 (1990)
• 6. M.H.M. Reddy, J.T. Olesberg, C. Cao, J.P. Prineas, doi: 10.1088/0268-1242/21/3/009, Semicond. Sci. Technol. 21, 267 (2006)
• 7. A.M. Monakhov, V.V. Sherstnev, A.P. Astakhova, Yu.P. Yakovlev, G. Boissier, R. Teissier, A.N. Baranov, doi: 10.1063/1.3075852, Appl. Phys. Lett. 94, 051102 (2009)
• 8. M.P. Mikhailova, I.A. Andreev, E.V. Kunitsyna, Yu.P. Yakovlev, doi: 10.1117/12.821004, Proc. SPIE 7355, 735511 (2009)
• 9. M.G. Mauk, V.M. Andreev, doi: 10.1088/0268-1242/18/5/308, Semicond. Sci. Technol. 18, 191 (2003)
• 10. E.V. Kunitsyna, T.V. L'vova, M.S. Dunaevskii, Ya.V. Terent'ev, A.N. Semenov, V.A. Solov'ev, B.Ya. Meltser, S.V. Ivanov, Yu.P. Yakovlev, doi: 10.1016/j.apsusc.2010.03.027, Appl. Surf. Sci. 256, 18 (2010)
• 11. I.A. Andreev, E.V. Kunitsyna, M.P. Mikhailova, Yu.P. Yakovlev, Mater. Res. Soc. Symp. Proc. 744, 589 (2003)
• 12. I.A. Andreev, M.A. Afrailov, A.N. Baranov, V.G. Danil'chenko, M.A. Mirsagatov, M.P. Mikhailova, Yu.P. Yakovlev, Tech. Phys. Lett. 12, 542 (1986)
• 13. S. Sze, Physics of Semiconductor Devices, Wiley, New York 1981

Identifiers

DOI

10.12693/APhysPolA.125.411