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2014 | 125 | 2 | 411-413
Article title

Electrical Properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with Low Diameter

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EN
Abstracts
EN
GaInAsSb/GaSb/GaAlAsSb double heterostructures are attractive for optoelectronic devices working in the 1.5-4.8 μm wavelength region. In this paper, the current mechanisms of liquid phase epitaxy grown GaInAsSb based double heterostructures with 100 μm diameter were investigated in the temperature range 77-350 K. It was found that diffusion current dominates at the high temperature (> 240 K) and small forward bias region, while generation-recombination current dominates at intermediate temperatures (242-171 K). At low temperature region (< 171 K), the tunneling mechanism of the current flow dominates in both forward and reverse biases.
Keywords
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Contributors
author
  • Department of Physics, Faculty of Sciences and Arts, Uludag University, 16059 Gorukle, Bursa, Turkey
author
  • Department of Physics, Faculty of Sciences and Arts, Uludag University, 16059 Gorukle, Bursa, Turkey
author
  • Ioffe Physical-Technical Institute RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
author
  • Ioffe Physical-Technical Institute RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
author
  • Ioffe Physical-Technical Institute RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
author
  • Ioffe Physical-Technical Institute RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv125n2078kz
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