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Article title
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Abstracts
GaInAsSb/GaSb/GaAlAsSb double heterostructures are attractive for optoelectronic devices working in the 1.5-4.8 μm wavelength region. In this paper, the current mechanisms of liquid phase epitaxy grown GaInAsSb based double heterostructures with 100 μm diameter were investigated in the temperature range 77-350 K. It was found that diffusion current dominates at the high temperature (> 240 K) and small forward bias region, while generation-recombination current dominates at intermediate temperatures (242-171 K). At low temperature region (< 171 K), the tunneling mechanism of the current flow dominates in both forward and reverse biases.
Discipline
- 73.40.-c: Electronic transport in interface structures
- 85.60.Dw: Photodiodes; phototransistors; photoresistors
- 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)
Journal
Year
Volume
Issue
Pages
411-413
Physical description
Dates
published
2014-02
Contributors
author
- Department of Physics, Faculty of Sciences and Arts, Uludag University, 16059 Gorukle, Bursa, Turkey
author
- Department of Physics, Faculty of Sciences and Arts, Uludag University, 16059 Gorukle, Bursa, Turkey
author
- Ioffe Physical-Technical Institute RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
author
- Ioffe Physical-Technical Institute RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
author
- Ioffe Physical-Technical Institute RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
author
- Ioffe Physical-Technical Institute RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv125n2078kz