Growth Analysis and Numerical Simulation of Cu_3BiS_3 Absorbing Layer Solar Cell through the wxAMPS and Finite Element Method

• Authors: F. Mesa , V. Ballesteros , A. Dussan
• Languages of publication: EN

Abstracts

EN

The properties and the efficiency of a semiconductor thin film depend on the state of stress and defects in the film structure. When the film is growing layer by layer, the elastic energy due to deformation stress between the substrate and the film is released partly due to the formation of dislocations in the critical thickness deformation. In this paper, we present a finite element analysis of the stress state in a thin film of Cu_3BiS_3 as a function of thickness and elastic energy release by nucleation of dislocations. Initially, we analyze the stress contours associated with the epitaxial growth and dislocation nucleation and then combine these two in order to study the effective potential energy state of the system. Finally, the tool wxAMPS is today an important application for simulation of solar cells with high reliability and an improved design over its analysis of microelectronic and photonic structures predecessor, incorporating physical principles concerning photovoltaic phenomena and uses a new method for solving algorithms, combining Newton and Gummel approaches, which provides greater stability and speed of computation.

Keywords

EN

68.35.Rh; 02.70.Bf; 07.05.Tp; 68.55.ag

Discipline

• 68.55.ag: Semiconductors
• 02.70.Bf: Finite-difference methods
• 68.35.Rh: Phase transitions and critical phenomena
• 07.05.Tp: Computer modeling and simulation

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 2
• Pages: 385-387

Dates

published

2014-02

Contributors

author

F. Mesa

• Departamento de Ciencias Básicas, Universidad Libre, Cra. 70 N° 53-40, Bogota, Colombia

author

V. Ballesteros

• Departamento de Ciencias Básicas, Universidad Libre, Cra. 70 N° 53-40, Bogota, Colombia

author

A. Dussan

• Departamento de Fisica, Universidad Nacional de Colombia, Cra. 30 N° 45-03, Bogota, Colombia

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Identifiers

DOI

10.12693/APhysPolA.125.385