PL EN


Preferences help
enabled [disable] Abstract
Number of results
2014 | 125 | 2 | 385-387
Article title

Growth Analysis and Numerical Simulation of Cu_3BiS_3 Absorbing Layer Solar Cell through the wxAMPS and Finite Element Method

Content
Title variants
Languages of publication
EN
Abstracts
EN
The properties and the efficiency of a semiconductor thin film depend on the state of stress and defects in the film structure. When the film is growing layer by layer, the elastic energy due to deformation stress between the substrate and the film is released partly due to the formation of dislocations in the critical thickness deformation. In this paper, we present a finite element analysis of the stress state in a thin film of Cu_3BiS_3 as a function of thickness and elastic energy release by nucleation of dislocations. Initially, we analyze the stress contours associated with the epitaxial growth and dislocation nucleation and then combine these two in order to study the effective potential energy state of the system. Finally, the tool wxAMPS is today an important application for simulation of solar cells with high reliability and an improved design over its analysis of microelectronic and photonic structures predecessor, incorporating physical principles concerning photovoltaic phenomena and uses a new method for solving algorithms, combining Newton and Gummel approaches, which provides greater stability and speed of computation.
Keywords
Year
Volume
125
Issue
2
Pages
385-387
Physical description
Dates
published
2014-02
References
  • 1. S.C. Jain, J.R. Willis, R. Bullough, doi: 10.1080/00018739000101491, Adv. Phys. 39, 127 (1990)
  • 2. S.C. Jain, A.H. Harker, R.A. Cowley, doi: 10.1080/01418619708223740, Philos. Mag. A 75, 1461 (1997)
  • 3. F.C. Frank, J. Van der Merve, doi: 10.1098/rspa.1949.0096, Proc. R. Soc. A 198, 216 (1949)
  • 4. R. People, J.C. Bean, doi: 10.1063/1.97637, Appl. Phys. Lett. 49, 229 (1985)
  • 5. J.Y. Tsao, B.W. Dodson, S.T. Picraux, D.M. Cornelison, doi: 10.1103/PhysRevLett.59.2455, Phys. Rev. Lett. 59, 2455 (1987)
  • 6. W. Bollmann, Crystal Defects and Crystalline Interfaces, Springer, Berlin 1970
  • 7. C.W. Pei, B. Turk, W.I. Wang, T.S. Kuan, doi: 10.1063/1.1413712, J. Appl. Phys. 90, 5959 (2001)
  • 8. P.M.J. Maree, J.C. Barbour, J.F. Van der Veen, K.L. Kavanagh, C.W.T. Bulle-Lieuwma, M.P.A. Viegers, doi: 10.1063/1.339078, J. Appl. Phys. 62, 4413 (1987)
  • 9. A. Bradley, Optical Storage for Computers Technology and Applications, Ellis Horwood Ltd, New York 1989
  • 10. G.B. Sakr, I.S. Yahia, M. Fadel, S.S. Fouad, N. Romcevic, doi: 10.1016/j.jallcom.2010.08.022, J. Alloys Comp. 507, 557 (2010)
  • 11. J.C. Manifacier, J. Gasiot, J.P. Fillard, doi: 10.1088/0022-3735/9/11/032, J. Phys. E 9, 1002 (1976)
  • 12. J.P. Hirth, J. Lothe, Theory of Dislocations, McGraw-Hill, New York 1968
  • 13. J.S. Sanghara, I.D. Agarwal, doi: 10.1016/S0022-3093(99)00484-6, J. Non-Cryst. Solids 256, 6 (1999)
  • 14. K. Schwartz, The Physics of Optical Recording, Springer-Verlag, Berlin 1993
  • 15. J.P. Dismukes, L. Ekstrom, R.J. Paff, doi: 10.1021/j100792a049, J. Phys. Chem. 68, 3021 (1964)
  • 16. F. Mesa, G. Gordillo, Th. Dittrich, K. Ellmer, R. Baier, S. Sadewasser, doi: 10.1063/1.3334728, Appl. Phys. Lett. 96, 082113 (2010)
  • 17. H. Zhu, A.K. Kalkan, J. Hou, S.J. Fonash, in: doi: 10.1063/1.57978, Proc. Nat. Center for Photovoltaics (NCPV), 15th Program Review Meeting, Denver (CO), 1999, p. 309
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv125n2069kz
Identifiers
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.