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Number of results
2014 | 125 | 2 | 293-295

Article title

Effects of RF Power on Electrical and Structural Properties of Sputtered SnO_2:Sb Thin Films

Content

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EN

Abstracts

EN
In this work, antimony doped tin oxide (SnO_2:Sb) thin films were fabricated using a radio frequency magnetron sputtering system on Si wafer and glass substrates. The base pressure in the sputtering chamber was 1.0 Pa. The SnO_2:Sb thin films were deposited for 1.0 h in a mixture of Ar and O_2 environment with O_2/Ar ratio of 10/90 at 75, 100, and 125 W RF sputtering powers. The microstructure of SnO_2:Sb thin films was assessed using a field emission scanning electron microscopy. The crystallographic structure of the sample was determined by X-ray diffraction. The average surface roughness (R_{a}) was measured with atomic force microscopy. The electrical resistivity of the deposited films was measured by the four-point-probe method. The thicknesses of the films were measured by surface profiler.

Keywords

EN

Contributors

author
  • Sakarya University, Engineering Faculty, Department of Metallurgical and Material Engineering, Esentepe Campus, Sakarya, Turkey
author
  • Sakarya University, Engineering Faculty, Department of Metallurgical and Material Engineering, Esentepe Campus, Sakarya, Turkey
author
  • Sakarya University, Engineering Faculty, Department of Metallurgical and Material Engineering, Esentepe Campus, Sakarya, Turkey
author
  • Sakarya University, Engineering Faculty, Department of Metallurgical and Material Engineering, Esentepe Campus, Sakarya, Turkey
author
  • Sakarya University, Engineering Faculty, Department of Metallurgical and Material Engineering, Esentepe Campus, Sakarya, Turkey
author
  • Sakarya University, Engineering Faculty, Department of Metallurgical and Material Engineering, Esentepe Campus, Sakarya, Turkey

References

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Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv125n2040kz
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