EN
In this work, antimony doped tin oxide (SnO_2:Sb) thin films were fabricated using a radio frequency magnetron sputtering system on Si wafer and glass substrates. The base pressure in the sputtering chamber was 1.0 Pa. The SnO_2:Sb thin films were deposited for 1.0 h in a mixture of Ar and O_2 environment with O_2/Ar ratio of 10/90 at 75, 100, and 125 W RF sputtering powers. The microstructure of SnO_2:Sb thin films was assessed using a field emission scanning electron microscopy. The crystallographic structure of the sample was determined by X-ray diffraction. The average surface roughness (R_{a}) was measured with atomic force microscopy. The electrical resistivity of the deposited films was measured by the four-point-probe method. The thicknesses of the films were measured by surface profiler.