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## Acta Physica Polonica A

2014 | 125 | 2 | 205-207
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### Simple Microwave Technique for Non-Destructive Testing of Electrical Properties of Magnetized Materials

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EN
New technologies allow obtain low-dimensional structures, thin films, monocrystal samples of modern semiconductor materials. Electrical parameters of semiconductors should be tested by non-destructive simple methods to provide the high quality of new electronic devices. The principle of operation of proposed compact microwave meter is based on magnetic vortex oscillation and magnetoplasmic wave excitation technique in semiconductors placed in strong magnetic field. A high frequency field is interacting with charge carriers of semiconductor sample and contactless measurements of density N and mobility μ of free charge carriers of semiconductors can be realized. Microwave technique for non-destructive testing electrical properties of semiconductor materials is described. Simple microwave meter consists of constant magnetic field source, high frequency generator, transmitting-receiving antenna and indicator. In semiconductor specimen placed in constant and alternating magnetic fields a vortex current and magnetoplasmic microwave are excited. The response signals are measured to find a value of density N and mobility μ of free charge carriers in testing materials. Experimental parameters of measured n-InSb, CdHgTe, BiSb specimens are presented.
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205-207
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published
2014-02
References
• 1. B.W. Maxfield, doi: 10.1119/1.1975500, Am. J. Phys. 37, 241 (1969)
• 2. J. Pozhela, Plasma and Current Instabilities in Semiconductors, Pergamon Press, Oxford 1981
• 3. L. Laurinavičius, The Use of HF Waves in Non-Contact Testing of Narrow-Gap Semiconductors and High-$T_{C}$ Superconductors, Technika, Vilnius 1998
• 4. Z. Jankauskas, L. Laurinavicius, Electron. Electr. Eng. 37, 32 (2002)
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