On the Validity of Diffusional Model in Determination of Electric Transport Parameters of Semiconductor Compound

• Authors: A. Dussan , F. Mesa
• Languages of publication: EN

Abstracts

EN

In this work we have studied the variable range hopping as a predominant electronic transport mechanism for semiconductor materials used as absorbent layer in photovoltaic devices. Dark conductivity measurements were carried out from 120 to 420 K in Si, Cu_3BiS_3, SnS, Cu_2ZnSnSe_4, and CuInGaSe_2 thin films. In the low-temperature range, variational range hopping was established for all samples. Using classical equations from the percolation theory and the diffusional model, the density of states near the Fermi level (N_{F}), as well as the hopping parameters (W - activation energy and R - hopping range) were calculated. A correlation between both models allowed us to evaluate the validity of the diffusional model in semiconductor compounds.

Keywords

EN

72.80.Ey; 73.50.-h; 73.61.Ga; 73.50.Gr

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 73.50.-h: Electronic transport phenomena in thin films(for electronic transport in mesoscopic systems, see 73.23.-b; see also 73.40.-c Electronic transport in interface structures; for electronic transport in nanoscale materials and structures, see 73.63.-b)
• 73.50.Gr: Charge carriers: generation, recombination, lifetime, trapping, mean free paths
• 73.61.Ga: II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 2
• Pages: 171-173

Dates

published

2014-02

Contributors

author

A. Dussan

• Departamento de Fisica, Universidad Nacional de Colombia, Carrera 30, Calle 45, Bogota, Colombia

author

F. Mesa

• Departamento de Fisica, Universidad Nacional de Colombia, Carrera 30, Calle 45, Bogota, Colombia
• Departamento de Ciencias Básicas, Universidad Libre, Bogota, Colombia

References

• 1. P.-W. Li, W.-H. Zhou, Z.-L. Hou, S.-X. Wu, doi: 10.1016/j.matlet.2012.03.058, Mater. Lett. 78, 131 (2012)
• 2. F. Mesa, A. Dussan, J. Sandino, H. Lichte, doi: 10.1007/s11051-012-1054-7, J. Nanopart. Res. 14, 1054 (2012)
• 3. C.Z. Wang, C.J. Zhu, T.W. Zhang, J. Li, doi: 10.1016/j.vacuum.2012.11.008, Vacuum 92, 7 (2013)
• 4. E. Pineda, M.E. Nicho, P.K. Nair, H.L. Hu, doi: 10.1016/j.solener.2011.06.015, Solar Energy 86, 1017 (2012)
• 5. A. Dussan, H.P. Quiroz, J.G.A. Martinez, doi: 10.1016/j.solmat.2011.04.025, Solar En. Mater. Solar Cells 100, 53 (2012)
• 6. S. Gall, C. Becker, E. Conrad, P. Dogan, F. Fenske, B. Gorka, K.Y. Lee, B. Rau, F. Ruske, B. Rech, H, doi: 10.1016/j.solmat.2008.11.029, Solar En. Mater. Solar Cells 93, 1004 (2009)
• 7. A. Dussan, R.H. Buitrago, doi: 10.1063/1.1848193, J. Appl. Phys. 97, 043711 (2005)
• 8. F. Mesa, C. Calderon, G. Gordillo, doi: 10.1016/j.tsf.2009.09.028, Thin Solid Films 518, 1764 (2010)
• 9. S.-Y. Lee, W.J. Lee, C.W. Nahm, J.M. Kim, S.J. Byun, T.H. Hwang, B.-K. Lee, Y.I. Jang, S.G. Lee, H.-M. Lee, B.W. Park, doi: 10.1016/j.cap.2012.12.003, Curr. Appl. Phys. 13, 775 (2013)
• 10. N. Parvathala Reddy, Rajeev Gupta, S.C. Agarwal, doi: 10.1016/j.jnoncrysol.2013.01.011, J. Non-Cryst. Solids 364, 69 (2013)
• 11. C.-H. Lin, G.Y. Wu, doi: 10.1016/S0040-6090(01)01402-X, Thin Solid Films 397, 280 (2001)
• 12. N.F. Mott, doi: 10.1080/14786436908216338, Philos. Mag. 19, 333 (1969)
• 13. A. Dussan, F. Mesa, M. Botero, G. Gordillo, doi: 10.1088/1742-6596/167/1/012018, J. Phys., Conf. Series 167, 012018 (2009)
• 14. M.-L. Liu, F.-Q. Huang, L.-D. Chen, I-W. Chen, doi: 10.1063/1.3130718, Appl. Phys. Lett. 94, 202103 (2009)
• 15. M. Thamilselvan, K. Premnazeer, D. Mangalaraj, Sa.K. Narayandass, doi: 10.1016/S0921-4526(03)00444-7, Physica B 337, 404 (2003)
• 16. M.H. Lee, C.W. Tai, J.J. Huang, doi: 10.1016/j.sse.2012.10.006, Solid-State Electron. 80, 72 (2013)
• 17. S.S. Babkair, A.A. Ansari, N.M. Al-Twarqi Depa, doi: 10.1016/j.matchemphys.2011.02.008, Mater. Chem. Phys. 127, 296 (2011)

Identifiers

DOI

10.12693/APhysPolA.125.171