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2014 | 125 | 2 | 171-173
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On the Validity of Diffusional Model in Determination of Electric Transport Parameters of Semiconductor Compound

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In this work we have studied the variable range hopping as a predominant electronic transport mechanism for semiconductor materials used as absorbent layer in photovoltaic devices. Dark conductivity measurements were carried out from 120 to 420 K in Si, Cu_3BiS_3, SnS, Cu_2ZnSnSe_4, and CuInGaSe_2 thin films. In the low-temperature range, variational range hopping was established for all samples. Using classical equations from the percolation theory and the diffusional model, the density of states near the Fermi level (N_{F}), as well as the hopping parameters (W - activation energy and R - hopping range) were calculated. A correlation between both models allowed us to evaluate the validity of the diffusional model in semiconductor compounds.
  • Departamento de Fisica, Universidad Nacional de Colombia, Carrera 30, Calle 45, Bogota, Colombia
  • Departamento de Fisica, Universidad Nacional de Colombia, Carrera 30, Calle 45, Bogota, Colombia
  • Departamento de Ciencias Básicas, Universidad Libre, Bogota, Colombia
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