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2014 | 125 | 1 | 93-97
Article title

Oscillator Strengths of Quantum Transitions in Spherical Quantum Dot GaAs/Al_{x}Ga_{1-x}As/GaAs/Al_{x}Ga_{1-x}As with On-Center Donor Impurity

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EN
Abstracts
EN
The investigation of the electron and hole energies and probability densities is performed for the cases with and without the donor hydrogenic impurity placed into the centre of quantum dot quantum well structures with different thicknesses of layers. The oscillator strengths of intra- and interband quantum transitions in GaAs/Al_{x}Ga_{1-x}As core/shell/well/shell spherical quantum dot with ionized on-center donor impurity are estimated. The oscillator strengths of quantum transitions non-monotonously depend on the width of the layers due to the different location of carriers. The optimal geometrical parameters of the nanostructure are estimated for the possibility of multicolor light emission based on interband quantum transitions.
Keywords
EN
Publisher

Year
Volume
125
Issue
1
Pages
93-97
Physical description
Dates
published
2014-01
received
2013-04-15
(unknown)
2013-09-26
Contributors
author
  • Chernivtsi National University, Kotsubynsky str., 2, Chernivtsi, 58012, Ukraine
author
  • Chernivtsi National University, Kotsubynsky str., 2, Chernivtsi, 58012, Ukraine
  • Chernivtsi National University, Kotsubynsky str., 2, Chernivtsi, 58012, Ukraine
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv125n118kz
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