Effect of High Energy Electron Irradiation on Structure and Optical Properties of ZnO Films

• Authors: D. Myroniuk , G. Lashkarev , I. Shtepliuk , V. Lazorenko , V. Maslyuk , I. Timofeeva , A. Romaniuk , V. Strelchuk , O. Kolomys , V. Khomyak
• Languages of publication: EN

Abstracts

EN

Zinc oxide films were grown on sapphire substrates by direct current magnetron sputtering and irradiated by electrons with energy 10 MeV and fluences 10^{16} and 2 × 10^{16} cm^{-2}. As-grown and irradiated samples were investigated by X-ray diffraction and photoluminescence spectroscopy. It was found that radiation causes the appearance of complex defects, reducing the size of coherent scattering regions and the increase of the defect PL band.

Keywords

EN

61.80.-x; 78.55.Et; 71.55.Gs

Discipline

• 78.55.Et: II-VI semiconductors
• 71.55.Gs: II-VI semiconductors
• 61.80.-x: Physical radiation effects, radiation damage(for photochemical reactions, see 82.50.-m; for effects of ionizing radiation on biological systems, see 87.53.-j)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 124
• Issue: 5
• Pages: 891-894

Dates

published

2013-11

Contributors

author

D. Myroniuk

• Frantsevich Institute for Problems of Material Science, NAS of Ukraine, 3 Krzhizhanivsky Str., 03680 Kyiv, Ukraine

author

G. Lashkarev

• Frantsevich Institute for Problems of Material Science, NAS of Ukraine, 3 Krzhizhanivsky Str., 03680 Kyiv, Ukraine

author

I. Shtepliuk

• Frantsevich Institute for Problems of Material Science, NAS of Ukraine, 3 Krzhizhanivsky Str., 03680 Kyiv, Ukraine

author

V. Lazorenko

• Frantsevich Institute for Problems of Material Science, NAS of Ukraine, 3 Krzhizhanivsky Str., 03680 Kyiv, Ukraine

author

V. Maslyuk

• Institute of Electron Physics, NAS of Ukraine, 21 Universitetska Str., 88017 Uzhgorod, Ukraine

author

I. Timofeeva

• Frantsevich Institute for Problems of Material Science, NAS of Ukraine, 3 Krzhizhanivsky Str., 03680 Kyiv, Ukraine

author

A. Romaniuk

• Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 pr. Nauki, 03028 Kyiv, Ukraine

author

V. Strelchuk

• Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 pr. Nauki, 03028 Kyiv, Ukraine

author

O. Kolomys

• Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 pr. Nauki, 03028 Kyiv, Ukraine

author

V. Khomyak

• Fedkovich Chernivtsi National University, 2 Kotsubinsky Str., 58012 Chernivtsi, Ukraine

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Identifiers

DOI

10.12693/APhysPolA.124.891