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2013 | 124 | 5 | 891-894
Article title

Effect of High Energy Electron Irradiation on Structure and Optical Properties of ZnO Films

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EN
Abstracts
EN
Zinc oxide films were grown on sapphire substrates by direct current magnetron sputtering and irradiated by electrons with energy 10 MeV and fluences 10^{16} and 2 × 10^{16} cm^{-2}. As-grown and irradiated samples were investigated by X-ray diffraction and photoluminescence spectroscopy. It was found that radiation causes the appearance of complex defects, reducing the size of coherent scattering regions and the increase of the defect PL band.
Keywords
EN
Contributors
author
  • Frantsevich Institute for Problems of Material Science, NAS of Ukraine, 3 Krzhizhanivsky Str., 03680 Kyiv, Ukraine
author
  • Frantsevich Institute for Problems of Material Science, NAS of Ukraine, 3 Krzhizhanivsky Str., 03680 Kyiv, Ukraine
author
  • Frantsevich Institute for Problems of Material Science, NAS of Ukraine, 3 Krzhizhanivsky Str., 03680 Kyiv, Ukraine
author
  • Frantsevich Institute for Problems of Material Science, NAS of Ukraine, 3 Krzhizhanivsky Str., 03680 Kyiv, Ukraine
author
  • Institute of Electron Physics, NAS of Ukraine, 21 Universitetska Str., 88017 Uzhgorod, Ukraine
author
  • Frantsevich Institute for Problems of Material Science, NAS of Ukraine, 3 Krzhizhanivsky Str., 03680 Kyiv, Ukraine
author
  • Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 pr. Nauki, 03028 Kyiv, Ukraine
author
  • Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 pr. Nauki, 03028 Kyiv, Ukraine
author
  • Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 pr. Nauki, 03028 Kyiv, Ukraine
author
  • Fedkovich Chernivtsi National University, 2 Kotsubinsky Str., 58012 Chernivtsi, Ukraine
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv124n540kz
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