Characterization of n-ZnO/p-GaN Heterojunction for Optoelectronic Applications

• Authors: L. Wachnicki , S. Gieraltowska , B. Witkowski , S. Figge , D. Hommel , E. Guziewicz , M. Godlewski
• Languages of publication: EN

Abstracts

EN

An important feature of zinc oxide and gallium nitride materials are their similar physical properties. This allows to use them as a p-n junction materials for applications in optoelectronics. In earlier work we presented use of ZnO as a transparent contact to GaN, which may improve external efficiency of LED devices. In this work we discuss properties of a n-ZnO/p-GaN heterostructure and discuss its optimization. The heterostructure is investigated by us for possible applications, e.g. in a new generation of UV LEDs or UV light detectors.

Keywords

EN

85.30.Kk; 61.05.cp; 81.05.Dz

Discipline

• 85.30.Kk: Junction diodes
• 61.05.cp: X-ray diffraction
• 81.05.Dz: II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 124
• Issue: 5
• Pages: 869-872

Dates

published

2013-11

Contributors

author

L. Wachnicki

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

S. Gieraltowska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

B. Witkowski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

S. Figge

• University of Bremen Institute of Solid State Physics Semiconductor Epitaxy, Otto-Hahn-Allee NW1, D-28359 Bremen, Germany

author

D. Hommel

• University of Bremen Institute of Solid State Physics Semiconductor Epitaxy, Otto-Hahn-Allee NW1, D-28359 Bremen, Germany

author

E. Guziewicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
• Cardinal Stefan Wyszyński University, College of Science, Department of Mathematics and Natural Sciences, Warszawa, Poland

References

• [1] C. Skierbiszewski, M. Siekacz, H. Turski, G. Muziol, M. Sawicka, P. Wolny, G. Cywiński, L. Marona, P. Perlin, P. Wiśniewski, M. Albrecht, Z.R. Wasilewski, S. Porowski, Appl. Phys. Expr. 5, 2103 (2012)
• [2] M. Godlewski, E. Guziewicz, K. Kopalko, G. Łuka, M.I. Łukasiewicz, T. Krajewski, B.S. Witkowski, S. Gierałtowska, Low Temp. Phys. 37, 235 (2011)
• [3] S. Gierałtowska, L. Wachnicki, B.S. Witkowski, M. Godlewski, E. Guziewicz, Thin Solid Films 520, 4694 (2012)
• [4] S. Grzanka, G. Łuka, T.A. Krajewski, E. Guziewicz, R. Jachymek, W. Purgal, P. Perlin, Acta Phys. Pol. A 119, 672 (2011)
• [5] Y.I. Alivov, E.V. Kalinina, A.E. Cherenkov, D.C. Look, B.M. Ataev, A.K. Omaev, D.M. Bagnall, Appl. Phys. Lett. 83, 4719 (2003)
• [6] C. Klingshirn, Phys. Status Solidi B 244, 3027 (2007)
• [7] S.J. Pearton, D.P. Norton, K. Ip, Y.W. Heo, T. Steiner, Superlatt. Microstruct. 34, 3 (2003)
• [8] D.C. Look, B. Claflin, Y.I. Alivov, S.J. Park, Phys. Status Solidi A 201, 2203 (2004)
• [9] Y. Chen, D.M. Bagnal, H.-J. Koh, K.-T. Park, K. Hiraga, Z. Zhu, T. Yao, J. Appl. Phys. 84, 3912 (1998)
• [10] Ya.I. Alivov, J.E. van Nostrand, D.C. Look, M.V. Chukichev, B.M. Ataev, Appl. Phys. Lett. 83, 4719 (2003)
• [11] L. Wachnicki, T. Krajewski, G. Luka, B. Witkowski, B. Kowalski, K. Kopalko, J.Z. Domagala, M. Guziewicz, M. Godlewski, E. Guziewicz, Thin Solid Films 518, 4556 (2010)
• [12] D.J. Rogers, F.H. Teherani, A. Yasan, K. Minder, P. Kung, M. Razeghi, Appl. Phys. Lett. 88, 141918 (2006)
• [13] L. Wachnicki, A. Duzynska, J.Z. Domagała, B. S. Witkowski, T.A. Krajewski, E. Przeździecka, M. Guziewicz, A. Wierzbicka, K. Kopalko, S. FIügge, D. Hommel, M. Godlewski, E. Guziewicz, Acta Phys. Pol. A 120, (2011)
• [14] T. Suntola, in: Handbook of Crystal Growth, Part 3b Growth Mechanisms and Dynamics, Ed. D.T.J. Hurle, Elsevier, Amsterdam 1994, p. 605
• [15] R. Hickman, J.M. Van Hove, P.P. Chow, J.J. Klaassen, A.M. Wowchak, C.J. Polley, D.J. King, F. Ren, C.R. Abernathy, S.J. Pearton, K.B. Jung, H. Cho, J.R. La Roche, Solid-State Electron. 44, 377 (2000)
• [16] A. de Luna Bugallo, M. Tchernycheva, G. Jacopin, L. Rigutti, F.H. Julien, S.T. Chou, Y.T. Lin, P.H. Tseng, L.W. Tu, Nanotechnology 21, 315201 (2010)
• [17] J.Y. Lee, J.H. Lee, H. Seung Kim, C.H. Lee, H.S. Ahn, H.K. Cho, Y.Y. Kim, B.H. Kong, H.S. Lee, Thin Solid Films 517, 5157 (2009)
• [18] S. Jha, J.C. Qian, O. Kutsay, J. Kovac Jr, C.Y. Luan, J.A. Zapien, W. Zhang, S.T. Lee, I. Bello, Nanotechnology 22, 245202 (2011)

Identifiers

DOI

10.12693/APhysPolA.124.869