Characterization of n-ZnO/p-GaN Heterojunction for Optoelectronic Applications

• Authors: L. Wachnicki , S. Gieraltowska , B. Witkowski , S. Figge , D. Hommel , E. Guziewicz , M. Godlewski
• Languages of publication: EN

Abstracts

EN

An important feature of zinc oxide and gallium nitride materials are their similar physical properties. This allows to use them as a p-n junction materials for applications in optoelectronics. In earlier work we presented use of ZnO as a transparent contact to GaN, which may improve external efficiency of LED devices. In this work we discuss properties of a n-ZnO/p-GaN heterostructure and discuss its optimization. The heterostructure is investigated by us for possible applications, e.g. in a new generation of UV LEDs or UV light detectors.

Keywords

EN

85.30.Kk; 61.05.cp; 81.05.Dz

Discipline

• 85.30.Kk: Junction diodes
• 61.05.cp: X-ray diffraction
• 81.05.Dz: II-VI semiconductors

• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 124
• Issue: 5
• Pages: 869-872

Dates

published

2013-11

Contributors

author

L. Wachnicki

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

S. Gieraltowska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

B. Witkowski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

S. Figge

• University of Bremen Institute of Solid State Physics Semiconductor Epitaxy, Otto-Hahn-Allee NW1, D-28359 Bremen, Germany

author

D. Hommel

• University of Bremen Institute of Solid State Physics Semiconductor Epitaxy, Otto-Hahn-Allee NW1, D-28359 Bremen, Germany

author

E. Guziewicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
• Cardinal Stefan Wyszyński University, College of Science, Department of Mathematics and Natural Sciences, Warszawa, Poland

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Identifiers

DOI

10.12693/APhysPolA.124.869