Fabrication and Properties of Amorphous In-Ga-Zn-O Material and Transistors

• Authors: J. Kaczmarski , A. Taube , E. Dynowska , J. Dyczewski , M. Ekielski , E. Kamińska , A. Piotrowska
• Languages of publication: EN

Abstracts

EN

In-Ga-Zn-O thin films were fabricated by means of reactive RF magnetron sputtering. Mechanism of free electrons generation via oxygen vacancies formation is proposed to determine the relationship between oxygen content in the deposition atmosphere and the transport properties of IGZO thin films. The depletion-mode a-IGZO thin film transistor with field-effect mobility of 12 cm^2/(Vs) has been demonstrated.

Keywords

EN

81.05.Gc; 81.15.Cd; 85.30.Tv; 72.80.Ng; 73.61.Jc

Discipline

• 81.05.Gc: Amorphous semiconductors
• 73.61.Jc: Amorphous semiconductors; glasses
• 85.30.Tv: Field effect devices
• 72.80.Ng: Disordered solids
• 81.15.Cd: Deposition by sputtering

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 124
• Issue: 5
• Pages: 855-857

Dates

published

2013-11

Contributors

author

J. Kaczmarski

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Taube

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
• Institute of Microelectronics and Optoelectronics, WUT, Koszykowa 75, 00-662 Warsaw, Poland

author

E. Dynowska

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
• Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Dyczewski

• Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Ekielski

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Kamińska

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Piotrowska

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

References

• [1] S. Ginley, H. Hosono, D. Paine, Handbook of Transparent Conductors, Springer, London 2010, p. 459
• [2] T. Kamiya, K. Nomura, H. Hosono, Sci. Technol. Adv. Mater. 11, 044305 (2010)
• [3] E. Fortunato, P. Barquinha, R. Martins, Adv. Mater. 24, 2945 (2012)

Identifiers

DOI

10.12693/APhysPolA.124.855