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2013 | 124 | 5 | 855-857
Article title

Fabrication and Properties of Amorphous In-Ga-Zn-O Material and Transistors

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EN
Abstracts
EN
In-Ga-Zn-O thin films were fabricated by means of reactive RF magnetron sputtering. Mechanism of free electrons generation via oxygen vacancies formation is proposed to determine the relationship between oxygen content in the deposition atmosphere and the transport properties of IGZO thin films. The depletion-mode a-IGZO thin film transistor with field-effect mobility of 12 cm^2/(Vs) has been demonstrated.
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Contributors
author
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Microelectronics and Optoelectronics, WUT, Koszykowa 75, 00-662 Warsaw, Poland
author
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
References
  • [1] S. Ginley, H. Hosono, D. Paine, Handbook of Transparent Conductors, Springer, London 2010, p. 459
  • [2] T. Kamiya, K. Nomura, H. Hosono, Sci. Technol. Adv. Mater. 11, 044305 (2010)
  • [3] E. Fortunato, P. Barquinha, R. Martins, Adv. Mater. 24, 2945 (2012)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv124n530kz
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