Electrical Properties of SbSI/Sb_2S_3 Single and Double Heterostructures

• Authors: B. Toroń , M. Nowak , A. Grabowski , M. Kępińska
• Languages of publication: EN

Abstracts

EN

The SbSI/Sb_2S_3 single heterostructures as well as Sb_2S_3/SbSI/Sb_2S_3 and SbSI/Sb_2S_3/SbSI double heterostructures have been produced by applying CO_2 laser treatment of p-type SbSI single crystals. The current-voltage and transient characteristics of these heterostructures have been measured in temperatures below and above the SbSI single crystal Curie temperature (T_{c} = 293 K). The results have been fitted with appropriate theoretical formulae to determine the following types of the investigated heterojunctions: P-p SbSI/Sb_2S_3, p-P-p Sb_2S_3/SbSI/Sb_2S_3 and P-p-P SbSI/Sb_2S_3/SbSI. Influence of the illumination on electrical properties of SbSI/Sb_2S_3 single and double heterostructures has been reported. Fabricated new structures may be potentially applicable in electronics and optoelectronics as a new type of metal-ferroelectric-semiconductor devices.

Keywords

EN

74.78.Fk; 79.60.Jv; 73.40.-c; 78.66.-w

Discipline

• 73.40.-c: Electronic transport in interface structures
• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)
• 74.78.Fk: Multilayers, superlattices, heterostructures
• 79.60.Jv: Interfaces; heterostructures; nanostructures

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 124
• Issue: 5
• Pages: 830-832

Dates

published

2013-11

Contributors

author

B. Toroń

• Solid State Physics Section, Institute of Physics, Silesian University of Technology, Z. Krasińskiego 8, 40-019 Katowice, Poland

author

M. Nowak

• Solid State Physics Section, Institute of Physics, Silesian University of Technology, Z. Krasińskiego 8, 40-019 Katowice, Poland

author

A. Grabowski

• Solid State Physics Section, Institute of Physics, Silesian University of Technology, Z. Krasińskiego 8, 40-019 Katowice, Poland

author

M. Kępińska

• Solid State Physics Section, Institute of Physics, Silesian University of Technology, Z. Krasińskiego 8, 40-019 Katowice, Poland

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Identifiers

DOI

10.12693/APhysPolA.124.830