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2013 | 124 | 5 | 830-832
Article title

Electrical Properties of SbSI/Sb_2S_3 Single and Double Heterostructures

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EN
Abstracts
EN
The SbSI/Sb_2S_3 single heterostructures as well as Sb_2S_3/SbSI/Sb_2S_3 and SbSI/Sb_2S_3/SbSI double heterostructures have been produced by applying CO_2 laser treatment of p-type SbSI single crystals. The current-voltage and transient characteristics of these heterostructures have been measured in temperatures below and above the SbSI single crystal Curie temperature (T_{c} = 293 K). The results have been fitted with appropriate theoretical formulae to determine the following types of the investigated heterojunctions: P-p SbSI/Sb_2S_3, p-P-p Sb_2S_3/SbSI/Sb_2S_3 and P-p-P SbSI/Sb_2S_3/SbSI. Influence of the illumination on electrical properties of SbSI/Sb_2S_3 single and double heterostructures has been reported. Fabricated new structures may be potentially applicable in electronics and optoelectronics as a new type of metal-ferroelectric-semiconductor devices.
Keywords
Contributors
author
  • Solid State Physics Section, Institute of Physics, Silesian University of Technology, Z. Krasińskiego 8, 40-019 Katowice, Poland
author
  • Solid State Physics Section, Institute of Physics, Silesian University of Technology, Z. Krasińskiego 8, 40-019 Katowice, Poland
author
  • Solid State Physics Section, Institute of Physics, Silesian University of Technology, Z. Krasińskiego 8, 40-019 Katowice, Poland
author
  • Solid State Physics Section, Institute of Physics, Silesian University of Technology, Z. Krasińskiego 8, 40-019 Katowice, Poland
References
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Document Type
Publication order reference
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bwmeta1.element.bwnjournal-article-appv124n521kz
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