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2013 | 124 | 5 | 821-823
Article title

Carrier Dynamics and Dynamic Band-Bending in Type-II ZnTe/ZnSe Quantum Dots

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EN
Abstracts
EN
Carrier dynamics and dynamic band-bending in self-assembled ZnTe/ZnSe quantum dots have been studied by means of time-resolved photoluminescence experiment at low temperatures. The experiment reveals clearly type-II character of the confinement potential in the dot manifested in: (i) long photoluminescence decay time constant of 28-35 ns, and (ii) temporal shift of the quantum dot peak emission towards low energy following the laser pulse excitation. The magnitude of the spectral shift Δ E depends on the dot size and the power density of excitation pulse. For the dots under study and given experimental conditions Δ E ≈ 28 ÷ 42 meV.
Keywords
EN
Contributors
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan
author
  • Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan
author
  • Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan
author
  • Department of Electrophysics, National Chiao Tung University, Hsin Chu 300, Taiwan
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv124n518kz
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