Electronic Structure of Elongated In_{0.3}Ga_{0.7}As/GaAs Quantum Dots

• Authors: M. Pieczarka , A. Musiał , P. Podemski , G. Sęk , J. Misiewicz
• Languages of publication: EN

Abstracts

EN

In this contribution the electronic structure of large In_{0.3}Ga_{0.7}As/GaAs quantum dots is studied theoretically by means of 8 band k · p modeling. These quantum dots constitute unique physical system due to the low strain limit of the Stranski-Krastanow growth mode resulting in relatively large physical volume and elongation of the quantum dots in [1-10] direction. As a result of these critical growth conditions the electronic structure is expected to be very sensitive to the nanostructure size, shape, and composition of the quantum dot as well as the accompanying wetting layer. Another peculiarity of investigated system is the confining potential which is rather shallow and weakened in comparison to standard quantum dots. It makes them very interesting in view of both fundamental study and potential applications. To reveal physical mechanisms determining the optical properties of the investigated system, the electronic structure, mainly the number of confined states, and the wave function extension as a function of both quantum dot size and geometry have been simulated numerically and the importance of electron-hole Coulomb interactions has been evaluated.

Keywords

EN

78.67.Hc; 73.21.La; 73.22.-f

Discipline

• 73.22.-f: Electronic structure of nanoscale materials and related systems
• 78.67.Hc: Quantum dots
• 73.21.La: Quantum dots

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 124
• Issue: 5
• Pages: 809-812

Dates

published

2013-11

Contributors

author

M. Pieczarka

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

A. Musiał

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

P. Podemski

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

G. Sęk

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

J. Misiewicz

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

References

• [1] Y. Arakawa, H. Sakaki, Appl. Phys. Lett. 40, 939 (1982)
• [2] Nano-Optoelectronics: Concepts, Physics and Devices, Ed. M. Grundmann, Springer, Berlin 2002
• [3] L.C. Andreani, G. Panzarini, J.M. Gerard, Phys. Rev. B 60, 13276 (1999)
• [4] M. Wimmer, S.V. Nair, J. Shumway, Phys. Rev. B 73, 165305 (2006)
• [5] A. Löffler, J.P. Reithmaier, A. Forchel, A. Sauerwald, D. Peskes, T. Kümmell, G. Bacher, J. Cryst. Growth 286, 6 (2006)
• [6] J.P. Reithmaier, G. Sęk, A. Löffler, C. Hofmann, S. Kuhn, S. Reitzenstein, L. Keldysh, V. Kulakovskii, T. Reinecke, A. Forchel, Nature 432, 197 (2004)
• [7] More about the software at: http://www.nextnano.de
• [8] I. Vurgaftman, J.R. Meyer, L.R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001)
• [9] P. Poloczek, G. Sęk, J. Misiewicz, A. Löffler, J.P. Reithmaier, A. Forchel, J. Appl. Phys. 100, 013503 (2006)
• [10] A. Musiał, G. Sęk, A. Maryński, P. Podemski, J. Misiewicz, A. Löffler, S. Höfling, S. Reitzenstein, J.P. Reithmaier, A. Forchel, Acta Phys. Pol. A 120, 883 (2011)
• [11] S. Reitzenstein, S. Münch, P. Franeck, A. Rahimi-Iman, A. Löffler, S. Höfling, L. Worschech, A. Forchel, Phys. Rev. Lett. 103, 127401 (2009)
• [12] T. Walther, A.G. Cullis, D.J. Norris, M. Hopkinson, Phys. Rev. Lett. 86, 2381 (2001)
• [13] N. Liu, J. Tersoff, O. Baklenov, A.L. Holmes, Jr., C.K. Shih, Phys. Rev. Lett. 84, 334 (2000)
• [14] G. Sęk, A. Musiał, P. Podemski, M. Syperek, J. Misiewicz, A. Löffler, S. Höfling, L. Worschech, A. Forchel, J. Appl. Phys. 107, 096106 (2010)
• [15] M. Syperek, M. Baranowski, G. Sęk, J. Misiewicz, A. Löffler, S. Höfling, S. Reitzenstein, M. Kamp, A. Forchel, Phys. Rev. B 87, 125305 (2013)
• [16] Handbook on Physical Properties of Semiconductors, Vol. 2, III-V Compound Semiconductors, Ed. S. Adachi, Springer, Boston 2004

Identifiers

DOI

10.12693/APhysPolA.124.809