Octagonal Defects as the Source of Gap States in Graphene Semiconducting Structures

• Authors: M. Pelc , W. Jaskólski , A. Ayuela , L. Chico
• Languages of publication: EN

Abstracts

EN

We study graphene nanoribbons and carbon nanotubes with divacancies, i.e., local defects composed of one octagon and a pair of pentagons. We show that the presence of divacancies leads to the appearance of gap states, which may act as acceptor or donor states. We explain the origin of those defect-localized states and prove that they are directly related to the zero-energy states of carbon ring forming the octagonal topological defect.

Keywords

EN

73.22.Pr; 61.72.Qq

Discipline

• 73.22.Pr: Electronic structure of graphene
• 61.72.Qq: Microscopic defects (voids, inclusions, etc.)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 124
• Issue: 5
• Pages: 777-780

Dates

published

2013-11

Contributors

author

M. Pelc

• Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland

author

W. Jaskólski

• Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland

author

A. Ayuela

• Centro de Física de Materiales CSIC-UPV/EHU, Donostia International Physics Center, 20018 San Sebastián, Spain

author

L. Chico

• Instituto de Ciencia de Materiales de Madrid, CSIC, C/Sor Juana Inés de la Cruz 3, 28049 Madrid, Spain

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Identifiers

DOI

10.12693/APhysPolA.124.777