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2013 | 124 | 5 | 777-780
Article title

Octagonal Defects as the Source of Gap States in Graphene Semiconducting Structures

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EN
Abstracts
EN
We study graphene nanoribbons and carbon nanotubes with divacancies, i.e., local defects composed of one octagon and a pair of pentagons. We show that the presence of divacancies leads to the appearance of gap states, which may act as acceptor or donor states. We explain the origin of those defect-localized states and prove that they are directly related to the zero-energy states of carbon ring forming the octagonal topological defect.
Keywords
EN
Year
Volume
124
Issue
5
Pages
777-780
Physical description
Dates
published
2013-11
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv124n506kz
Identifiers
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