Octagonal Defects as the Source of Gap States in Graphene Semiconducting Structures

• Authors: M. Pelc , W. Jaskólski , A. Ayuela , L. Chico
• Languages of publication: EN

Abstracts

EN

We study graphene nanoribbons and carbon nanotubes with divacancies, i.e., local defects composed of one octagon and a pair of pentagons. We show that the presence of divacancies leads to the appearance of gap states, which may act as acceptor or donor states. We explain the origin of those defect-localized states and prove that they are directly related to the zero-energy states of carbon ring forming the octagonal topological defect.

Keywords

EN

73.22.Pr   61.72.Qq  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 124
• Issue: 5
• Pages: 777-780

Dates

published

2013-11

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Identifiers

DOI

10.12693/APhysPolA.124.777