CVD Growth of Graphene Stacks on 4H-SiC (0001) Surface - X-ray Diffraction and Raman Spectroscopy Study

• Authors: M. Tokarczyk , G. Kowalski , K. Grodecki , J. Urban , W. Strupiński
• Languages of publication: EN

Abstracts

EN

Features associated with short and prolonged growth time in the chemical vapor deposition process of growth of graphene stacks on SiC (0001) substrate are reported. In particular general bimodal (as far as d_{002} interlayer spacing is concerned) distribution of graphene species across the surface of the samples is observed. It consists of thin few layer graphene coverage of most of the sample surface accompanied by thick graphite-like island distribution. It points to the two independent channels of graphene stacks growth with two characteristic growth rates.

Keywords

EN

61.48.Gh; 61.72.Dd; 63.22.Rc

Discipline

• 61.48.Gh: Structure of graphene
• 63.22.Rc: Phonons in graphene
• 61.72.Dd: Experimental determination of defects by diffraction and scattering

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 124
• Issue: 5
• Pages: 768-771

Dates

published

2013-11

Contributors

author

M. Tokarczyk

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

G. Kowalski

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

K. Grodecki

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

J. Urban

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

W. Strupiński

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.124.768