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2013 | 124 | 5 | 768-771
Article title

CVD Growth of Graphene Stacks on 4H-SiC (0001) Surface - X-ray Diffraction and Raman Spectroscopy Study

Content
Title variants
Languages of publication
EN
Abstracts
EN
Features associated with short and prolonged growth time in the chemical vapor deposition process of growth of graphene stacks on SiC (0001) substrate are reported. In particular general bimodal (as far as d_{002} interlayer spacing is concerned) distribution of graphene species across the surface of the samples is observed. It consists of thin few layer graphene coverage of most of the sample surface accompanied by thick graphite-like island distribution. It points to the two independent channels of graphene stacks growth with two characteristic growth rates.
Keywords
EN
Year
Volume
124
Issue
5
Pages
768-771
Physical description
Dates
published
2013-11
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv124n503kz
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