CVD Growth of Graphene Stacks on 4H-SiC (0001) Surface - X-ray Diffraction and Raman Spectroscopy Study

• Authors: M. Tokarczyk , G. Kowalski , K. Grodecki , J. Urban , W. Strupiński
• Languages of publication: EN

Abstracts

EN

Features associated with short and prolonged growth time in the chemical vapor deposition process of growth of graphene stacks on SiC (0001) substrate are reported. In particular general bimodal (as far as d_{002} interlayer spacing is concerned) distribution of graphene species across the surface of the samples is observed. It consists of thin few layer graphene coverage of most of the sample surface accompanied by thick graphite-like island distribution. It points to the two independent channels of graphene stacks growth with two characteristic growth rates.

Keywords

EN

61.48.Gh; 61.72.Dd; 63.22.Rc

Discipline

• 61.48.Gh: Structure of graphene
• 63.22.Rc: Phonons in graphene
• 61.72.Dd: Experimental determination of defects by diffraction and scattering

• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 124
• Issue: 5
• Pages: 768-771

Dates

published

2013-11

Contributors

author

M. Tokarczyk

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

G. Kowalski

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

K. Grodecki

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

J. Urban

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

W. Strupiński

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

References

• [1] J. Hass, R. Feng, J.E. Millán-Otoya, X. Li, M. Sprinkle, P.N. First, W.A. de Heer, E.H. Conrad, C. Berger, Phys. Rev. B 75, 214109 (2007)
• [2] A. Coati, M. Sauvage-Simkin, Y. Garreau, R. Pinchaux, T. Argunova, K. Aid, Phys. Rev. B 59, 12224 (1999)
• [3] M. Tokarczyk, H. Kępa, G. Kowalski, 2010, unpublished results
• [4] K. Grodecki, R. Bożek, W. Strupinski, A. Wysmołek, R. Stępniewski, J.M. Baranowski, Appl. Phys. Lett. 100, 261604 (2012)
• [5] J. Borysiuk, R. Bożek, W. Strupiński, A. Wysmołek, K. Grodecki, R. Stępniewski, J.M. Baranowski, J. Appl Phys. 105, 023503 (2009)
• [6] J. Borysiuk, R. Bożek, W. Strupiński, J.M. Baronowski, Mater. Sci. Forum 645-648, 577 (2010)
• [7] J. Borysiuk, R. Bożek, K. Grodecki, A. Wysmołek, W. Strupiński, R. Stępniewski, J.M. Baranowski, J. Appl. Phys. 108, 013518 (2010)
• [8] J. Borysiuk, J. Sołtys, R. Bożek, J. Piechota, S. Krukowski, W. Strupiński, J.M. Baranowski, R. Stępniewski, Phys. Rev. B 85, 045426 (2012)
• [9] D. Yang, R.F. Frindt, J. Mater. Res. 11, 1733 (1996)
• [10] D. Yang, S. Jiménez Sandoval, W.M.R. Divigalpitiya, J.C. Irwin, R.F. Frindt, Phys. Rev. B 43, 12053 (1991)
• [11] H. Fujimoto, Carbon 41, 1585 (2003)
• [12] J. Hass, J.E. Millán-Otoya, P.N. First, E.H. Conrad, Phys. Rev. B 78, 205424 (2008)
• [13] M. Tokarczyk, G. Kowalski, H. Kępa, K. Grodecki, A. Drabińska, W. Strupiński, in: XTOP 2012: 11th Biennial Conf. on High Resolution X-ray Diffraction and Imaging, 2012, Abstracts, p. 408
• [14] W. Ruland, Chemistry and Physics of Carbon, Vol. 4, Eds. P.L. Walker, P.A. Thrower, Dekker, New York 1968

Identifiers

DOI

10.12693/APhysPolA.124.768