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2013 | 124 | 5 | 761-764
Article title

Structural and Electrical Properties of SiC Grown by PVT Method in the Presence of the Cerium Vapor

Content
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EN
Abstracts
EN
The results of investigation of structural and electrical properties of bulk SiC crystals, which were grown by physical vapor transport method with different Ce impurity content added to the SiC source material, are presented. The gradual dosage of cerium from the SiC source and continuous presence of the cerium vapor over the SiC crystallization fronts during the crystal growth processes are confirmed. The cerium influences the overall concentration of structural defects. The increase of the concentration of both, donors and acceptors, and appearance of new shallow donors (15-32 meV) in 4H-SiC crystals are observed.
Keywords
Year
Volume
124
Issue
5
Pages
761-764
Physical description
Dates
published
2013-11
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv124n501kz
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