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2013 | 124 | 5 | 761-764
Article title

Structural and Electrical Properties of SiC Grown by PVT Method in the Presence of the Cerium Vapor

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EN
Abstracts
EN
The results of investigation of structural and electrical properties of bulk SiC crystals, which were grown by physical vapor transport method with different Ce impurity content added to the SiC source material, are presented. The gradual dosage of cerium from the SiC source and continuous presence of the cerium vapor over the SiC crystallization fronts during the crystal growth processes are confirmed. The cerium influences the overall concentration of structural defects. The increase of the concentration of both, donors and acceptors, and appearance of new shallow donors (15-32 meV) in 4H-SiC crystals are observed.
Keywords
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
author
  • Institute of Physical Chemistry, PAS, M. Kasprzaka 44/52, 01-224 Warsaw, Poland
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv124n501kz
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