A Contribution of Thermoelectric Properties of the Quaternary Chalcogenide Compound Tl_2GaInSe_4 Crystal

• Authors: R. Al Orainy
• Languages of publication: EN

Abstracts

EN

Thermoelectric transport measurements were made on single crystal samples of Tl_2GaInSe_4. The crystal was prepared by a special design based on the Bridgman technique. Measurements of thermoelectric power were carried out in a special high vacuum-tight calorimeter when the direction of temperature gradient is perpendicular to the cleavage plane. The measurements covered a temperature range extending from 300 to 725 K. The results indicate P-type conductivity for our investigated samples. At room temperature the value of thermoelectric power was 735 μV/deg. The electron to hole mobility ratio was found to be 1.35. The effective mass of holes at room temperature was evaluated as 4.635×10^{-29} kg, while for electron was equal to 8.468×10^{-31} kg. The relaxation time of majority and minority carriers was estimated as τ_p=2.968×10^{-10} s and τ_n=7.326×10^{-12} s, respectively. Also, the diffusion coefficient of holes and electrons at room temperature was calculated and found to be 265.132 cm^2/s and 358.139 cm^2/s, respectively. The diffusion length of holes and electrons are found to be L_p=2.805×10^{-4} cm and L_n=5.122×10^{-5} cm. In addition to these pronounced parameters, the efficiency of thermoelectric element (figure of merit) was evaluated which leads to better applications in many fields.

Keywords

EN

74.25.fc

Discipline

• 74.25.fc: Electric and thermal conductivity

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 124
• Issue: 4
• Pages: 728-731

Dates

published

2013-10

received

2013-02-14

(unknown)

2013-04-12

Contributors

author

R. Al Orainy

• Physics Department, Sciences of Faculty for Girls, King Abdulaziz University, Jeddah, Saudi Arabia

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Identifiers

DOI

10.12693/APhysPolA.124.728