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2013 | 124 | 4 | 728-731
Article title

A Contribution of Thermoelectric Properties of the Quaternary Chalcogenide Compound Tl_2GaInSe_4 Crystal

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EN
Abstracts
EN
Thermoelectric transport measurements were made on single crystal samples of Tl_2GaInSe_4. The crystal was prepared by a special design based on the Bridgman technique. Measurements of thermoelectric power were carried out in a special high vacuum-tight calorimeter when the direction of temperature gradient is perpendicular to the cleavage plane. The measurements covered a temperature range extending from 300 to 725 K. The results indicate P-type conductivity for our investigated samples. At room temperature the value of thermoelectric power was 735 μV/deg. The electron to hole mobility ratio was found to be 1.35. The effective mass of holes at room temperature was evaluated as 4.635×10^{-29} kg, while for electron was equal to 8.468×10^{-31} kg. The relaxation time of majority and minority carriers was estimated as τ_p=2.968×10^{-10} s and τ_n=7.326×10^{-12} s, respectively. Also, the diffusion coefficient of holes and electrons at room temperature was calculated and found to be 265.132 cm^2/s and 358.139 cm^2/s, respectively. The diffusion length of holes and electrons are found to be L_p=2.805×10^{-4} cm and L_n=5.122×10^{-5} cm. In addition to these pronounced parameters, the efficiency of thermoelectric element (figure of merit) was evaluated which leads to better applications in many fields.
Keywords
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Publisher

Year
Volume
124
Issue
4
Pages
728-731
Physical description
Dates
published
2013-10
received
2013-02-14
(unknown)
2013-04-12
Contributors
author
  • Physics Department, Sciences of Faculty for Girls, King Abdulaziz University, Jeddah, Saudi Arabia
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv124n423kz
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