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2013 | 124 | 4 | 720-723
Article title

Fabrication and Characterization of Photosensitive n-CdO/p-InSe Heterojunctions

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Abstracts
EN
Photosensitive n-CdO/p-InSe heterojunctions were developed and studied for the first time. The heterojunctions were fabricated by dc reactive magnetron sputtering of CdO thin films onto the freshly cleaved p-InSe single-crystal substrates (0 0 1). Surface morphology of the obtained films was studied by means of atomic force microscopy. From the X-ray diffraction result it is shown that the CdO film is polycrystalline with cubic structure. The mechanisms of current transport through the space-charge region under forward and back biases were established by investigation of temperature dependences of the I-V characteristics. The main photoelectric parameters and the photosensitivity spectra were measured at room temperature.
Keywords
Contributors
author
  • Institute for Problems of Materials Science of National Academy of Sciences of Ukraine, Iryny Vilde 5, Chernivtsi 58001, Ukraine
author
  • Institute for Problems of Materials Science of National Academy of Sciences of Ukraine, Iryny Vilde 5, Chernivtsi 58001, Ukraine
  • Institute for Problems of Materials Science of National Academy of Sciences of Ukraine, Iryny Vilde 5, Chernivtsi 58001, Ukraine
author
  • Chernivtsi National University, Kotsubynskogo, 2, Chernivtsi 58012, Ukraine
author
  • Chernivtsi National University, Kotsubynskogo, 2, Chernivtsi 58012, Ukraine
author
  • Institute for Problems of Materials Science of National Academy of Sciences of Ukraine, Iryny Vilde 5, Chernivtsi 58001, Ukraine
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv124n421kz
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