Quantum Model for Metal-Insulator Transition in Amorphous Gd_{x}Si_{1-x}

• Authors: A. Paja , M. Ornat
• Languages of publication: EN

Abstracts

EN

The model for experimentally observed metal-insulator transition induced by magnetic field in amorphous Gd_{x}Si_{1 - x} is presented. The method of calculation is based on the previously created model for amorphous alloys now developed to include magnetic field effects. The model is based on the quantum "2 k_{F}" scattering model theory where the pseudopotentials are replaced by the scattering matrix operators and the Fermi energy is properly determined by the accurate values of the phase shifts. The results agree very well with experimental data.

Keywords

EN

72.15.Cz; 72.15.Lh; 72.15.Rn

Discipline

• 72.15.Rn: Localization effects (Anderson or weak localization)
• 72.15.Cz: Electrical and thermal conduction in amorphous and liquid metals and alloys
• 72.15.Lh: Relaxation times and mean free paths

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 124
• Issue: 4
• Pages: 717-719

Dates

published

2013-10

received

2013-02-06

(unknown)

2013-07-04

Contributors

author

A. Paja

• AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, Department of Solid State Physics, al. A. Mickiewicza 30, 30-059 Kraków, Poland

author

M. Ornat

• AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, Department of Solid State Physics, al. A. Mickiewicza 30, 30-059 Kraków, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.124.717