Analysis of the Responses of Metal-Oxide Semiconductor Nanostructures to Nitrogen Dioxide

• Authors: M. Procek , T. Pustelny
• Languages of publication: EN

Abstracts

EN

The paper concerns analyses of the nanostructures based on metal-oxide semiconductors, such as titanium dioxide (TiO_2) and zinc oxide (ZnO) exposed to nitrogen dioxide (NO_2) in an atmosphere of dry and humid synthetic air. The investigations were performed at a rather low temperature amounting to 120°C. The responses of sensors differing in the morphology of their structures have been compared. Also the time of their responses were compared with each other. The paper describes theoretically changes in the effective resistance of these structures due to the interaction of the gas. The presented results are being discussed based on the analysis of physical and chemical phenomena.

Keywords

EN

82.47.Rs; 07.07.Df

Discipline

• 07.07.Df: Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
• 82.47.Rs: Electrochemical sensors

• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 124
• Issue: 3
• Pages: 529-533

Dates

published

2013-09

Contributors

author

M. Procek

• Department of Optoelectronics, Silesian University of Technology, Akademicka 2, 44-100 Gliwice, Poland

author

T. Pustelny

• Department of Optoelectronics, Silesian University of Technology, Akademicka 2, 44-100 Gliwice, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.124.529