X-ray Diffraction Topography - Investigation of Single Crystals Grown by the Czochralski Method

• Authors: M. Lefeld-Sosnowska , A. Malinowska
• Languages of publication: EN

Abstracts

EN

X-ray diffraction topography is one of basic diagnostics tools serving for visualisation of single crystal lattice defects. Defects of various kinds can be observed. The present study is a review of topographic results obtained in the X-ray laboratory of the Institute of Experimental Physics, University of Warsaw, for three families of single crystals grown by the Czochralski method: (i) silicon (Si) and Si_{1-x}Ge_{x}, (ii) selected binary REVO_4 oxides and (iii) selected ternary ABCO_4 oxides. The effect of chemical composition, growth conditions and post growth thermal annealing on the defect appearing in crystals is discussed. Various defects are revealed: the growth dislocations (some early Si crystals), the composition-gradient-induced lattice deformation (Si_{1-x}Ge_{x}, solid solutions Ca_{x}Sr_{1-x}NdAlO_4), defects generated in Si after the post growth thermal processes, oriented elongated rod-like macro-defects tending to form networks within the crystal core, cellular structure in the outer shell (SrLaGaO_4), and variously developed block structure (in selected binary REVO_4 crystals).

Keywords

EN

61.72.Ff

Discipline

• 61.72.Ff: Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 124
• Issue: 2
• Pages: 360-371

Dates

published

2013-08

Contributors

author

M. Lefeld-Sosnowska

• Institute of Experimental Physics, University of Warsaw, Hoża 69, PL 00-681 Warsaw, Poland

author

A. Malinowska

• Institute of Electronic Materials Technology, Wólczyńska 133, PL01-919 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.124.360