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2013 | 124 | 2 | 360-371
Article title

X-ray Diffraction Topography - Investigation of Single Crystals Grown by the Czochralski Method

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EN
Abstracts
EN
X-ray diffraction topography is one of basic diagnostics tools serving for visualisation of single crystal lattice defects. Defects of various kinds can be observed. The present study is a review of topographic results obtained in the X-ray laboratory of the Institute of Experimental Physics, University of Warsaw, for three families of single crystals grown by the Czochralski method: (i) silicon (Si) and Si_{1-x}Ge_{x}, (ii) selected binary REVO_4 oxides and (iii) selected ternary ABCO_4 oxides. The effect of chemical composition, growth conditions and post growth thermal annealing on the defect appearing in crystals is discussed. Various defects are revealed: the growth dislocations (some early Si crystals), the composition-gradient-induced lattice deformation (Si_{1-x}Ge_{x}, solid solutions Ca_{x}Sr_{1-x}NdAlO_4), defects generated in Si after the post growth thermal processes, oriented elongated rod-like macro-defects tending to form networks within the crystal core, cellular structure in the outer shell (SrLaGaO_4), and variously developed block structure (in selected binary REVO_4 crystals).
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EN
Publisher

Year
Volume
124
Issue
2
Pages
360-371
Physical description
Dates
published
2013-08
Contributors
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, PL 00-681 Warsaw, Poland
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, PL01-919 Warsaw, Poland
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Document Type
Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv124n227kz
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