Czochralski Growth and Optical Properties οf (Lu_{x}Gd_{1-x})_2SiO_5 Solid Solution Crystals Single Doped with Sm^{3+} and~Dy^{3+}

• Authors: W. Ryba-Romanowski , A. Strzęp , M. Głowacki , R. Lisiecki , P. Solarz , J. Domagala
• Languages of publication: EN

Abstracts

EN

Solid solution crystals (Lu_{x}Gd_{1-x})_2SiO_5 single doped with Sm^{3+} and Dy^{3+} were grown by the Czochralski method. Segregation coefficients Lu/Gd, melting temperatures and structures of solid solution crystals were determined for 0.15 ≤ x ≤ 0.8. It was found that for x ≥ 0.17 the crystals belong to the monoclinic system within a space group C2/c and their melting temperature diminishes monotonously from 1990C to 1780C when x decreases from 0.8 to 0.15. Disparity of ionic radii of Lu^{3+} and Gd^{3+} induces structural disorder that brings about an inhomogeneous broadening of spectral lines in absorption and emission spectra of incorporated luminescent Sm^{3+} and Dy^{3+} ions. Optical properties of obtained crystals were determined based on results of measurement of absorption and emission spectra and luminescence decay curves. Spectroscopic investigation revealed that Sm^{3+} doped crystals show intense emission distributed in the visible-near infrared region with the most intense band centred at 605 nm and characterized by a branching ratio of 0.43. Emission spectrum of Dy^{3+} doped crystals is dominated by a band centred at 575 nm and characterized by a branching ratio of 0.58. It has been concluded that the systems under study are potential laser materials able to generate visible emission upon GaN/InGaN laser diode pumping.

Keywords

EN

42.55.Rz; 42.70.Hj; 78.40.-q; 78.55.Fv

Discipline

• 78.55.Fv: Solid alkali halides
• 42.70.Hj: Laser materials
• 78.40.-q: Absorption and reflection spectra: visible and ultraviolet(for infrared spectra, see 78.30.-j; for optical spectra of superconductors, see 74.25.nd; for time resolved reflection spectroscopy, see 78.47.jg; for multiphoton absorption, see 79.20.Ws in impact phenomena)
• 42.55.Rz: Doped-insulator lasers and other solid state lasers

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 124
• Issue: 2
• Pages: 321-328

Dates

published

2013-08

Contributors

author

W. Ryba-Romanowski

• Institute of Low Temperature and Structure Research, Polish Academy of Sciences Okólna 2, 50-422 Wrocław, Poland

author

A. Strzęp

• Institute of Low Temperature and Structure Research, Polish Academy of Sciences Okólna 2, 50-422 Wrocław, Poland

author

M. Głowacki

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

R. Lisiecki

• Institute of Low Temperature and Structure Research, Polish Academy of Sciences Okólna 2, 50-422 Wrocław, Poland

author

P. Solarz

• Institute of Low Temperature and Structure Research, Polish Academy of Sciences Okólna 2, 50-422 Wrocław, Poland

author

J. Domagala

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.124.321