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2013 | 124 | 2 | 239-243
Article title

Si_{1-x}Ge_{x} Single Crystals Grown by the Czochralski Method: Defects and Electrical Properties

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EN
Abstracts
EN
Defects in Si_{1-x}Ge_{x} single crystals (2-8.5 at.% Ge) grown by the Czochralski method are investigated by synchrotron white beam topography and phase contrast imaging techniques. As the Ge concentration increases, dislocation structure evolves from individual dislocations to slip bands and sub-grain boundaries. We discuss the effect of dislocations on the electrical characteristics such as resistivity ρ_{v}, the Hall hole mobility μ_{p} and carrier lifetime τ_{e}. Diodes are fabricated by bonding p-Si_{1-x}Ge_{x} to n-Si wafers to investigate I-V characteristics and reverse recovery process. I-V characteristics are not deteriorated in spite of a five times decrease in τ_{e} with Ge concentration. A small reverse recovery time (determined by the accumulated charge) can be achieved for an optimised preset Ge concentration.
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EN
Contributors
author
  • Ioffe Physical-Technical Institute, RAS, Polytekhnicheskaya st. 26, 194021 St. Petersburg, Russia
  • X-ray Imaging Center, Department of Materials Science and Engineering, Pohang University of Science and Technology, San 31 Hyoja-dong, Namku, 790-784 Pohang, Republic of Korea
author
  • X-ray Imaging Center, Department of Materials Science and Engineering, Pohang University of Science and Technology, San 31 Hyoja-dong, Namku, 790-784 Pohang, Republic of Korea
author
  • Ioffe Physical-Technical Institute, RAS, Polytekhnicheskaya st. 26, 194021 St. Petersburg, Russia
author
  • Ioffe Physical-Technical Institute, RAS, Polytekhnicheskaya st. 26, 194021 St. Petersburg, Russia
author
  • Ioffe Physical-Technical Institute, RAS, Polytekhnicheskaya st. 26, 194021 St. Petersburg, Russia
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Document Type
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bwmeta1.element.bwnjournal-article-appv124n211kz
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