Czochralski-Grown Silicon Crystals for Microelectronics

• Authors: A. Bukowski
• Languages of publication: EN

Abstracts

EN

The Czochralski method of crystal growth is used since 1950s in scientific and industrial laboratories for growth of single crystals of large size and high quality. The article presents the general characteristics and selected improvements of the Czochralski method, and discusses its meaning and advantages in growth of silicon single crystals playing a key role in microelectronics.

Keywords

EN

81.10.Fq; 85.40.-e

Discipline

• 81.10.Fq: Growth from melts; zone melting and refining
• 85.40.-e: Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology(see also 85.45.-w Vacuum microelectronics; 84.40.Lj Microwave integrated electronics; 42.82.-m Integrated optics; 85.25.Hv Superconducting logic elements and memory devices; microelectronic circuits)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 124
• Issue: 2
• Pages: 235-238

Dates

published

2013-08

Contributors

author

A. Bukowski

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

References

• 1. Handbook of Semiconductor Silicon Technology, Eds. W.C.O. Mara, R.B. Herring, L.P. Hunt, Noyes Publications, Park Ridge (NJ) 1990
• 2. H.R. Huff, J. Electrochem. Soc. 149, S35 (2002)
• 3. L. Arnberg, M. Di Sabatino, E. Øvrelid, JOM, 38 (October 2011)
• 4. G. Fisher, M.R. Seacrist, R.W. Standley, Proc. IEEE 100, 1454 (2012)
• 5. P. Tomaszewski, On Jan Czochralski, Atut, Wrocław 2012 (in Polish, the English translation in preparation)
• 6. Elementary Crystal Growth, Ed. K. Sangwal, Saan Publ., Lublin 1994
• 7. D.T.J. Hurle, B. Cockayne, in: Handbook of Crystal Growth, Vol. 2A, Basic Techniques, Prentice-Hall, Englewood Cliffs 1994, Ch. 3
• 8. A.A. Wheeler, in: Handbook of Crystal Growth, Vol 1b. ed. D.T.J. Hurle, North-Holland, Amsterdam 1993, p. 683
• 9. W.G. Pfann, Zone Melting, Wiley, New York 1958
• 10. M. Ohwa, T. Higuchi, E. Toji, M. Watanabe, K. Homma, S. Takasu, in: Semiconductor Silicon, Eds. H.R. Huff, T. Abe, B. Kolbesen, The Electrochemical Society, Pennington, NJ 1986, p. 117
• 11. L.N. Hjellming, J.S. Walker, J. Fluid Mech. 182, 335 (1987)
• 12. A. Bukowski, P. Zabierowski, Elektronika 40, 10 (1999) (in Polish)
• 13. A. Bukowski, P. Zabierowski, W. Grzejszczyk, R. Nowak, Method of Obtaining the Silicon Single Crystals in the Czochralski Crystalization Device, Patent A1(21) 288359 (22) 90 12 20 5(51) C33B 15/00, 13.01.1994 (Polish patent)
• 14. Leybold System Presentation - Silicon'96, Fifth Scientific and Bussiness Conf., Rožnov pod Radhoštěm (Czech Republic) 1996

Identifiers

DOI

10.12693/APhysPolA.124.235