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Czochralski-Grown Silicon Crystals for Microelectronics

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The Czochralski method of crystal growth is used since 1950s in scientific and industrial laboratories for growth of single crystals of large size and high quality. The article presents the general characteristics and selected improvements of the Czochralski method, and discusses its meaning and advantages in growth of silicon single crystals playing a key role in microelectronics.
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
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