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2013 | 124 | 2 | 235-238
Article title

Czochralski-Grown Silicon Crystals for Microelectronics

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Languages of publication
EN
Abstracts
EN
The Czochralski method of crystal growth is used since 1950s in scientific and industrial laboratories for growth of single crystals of large size and high quality. The article presents the general characteristics and selected improvements of the Czochralski method, and discusses its meaning and advantages in growth of silicon single crystals playing a key role in microelectronics.
Keywords
EN
Year
Volume
124
Issue
2
Pages
235-238
Physical description
Dates
published
2013-08
References
  • 1. Handbook of Semiconductor Silicon Technology, Eds. W.C.O. Mara, R.B. Herring, L.P. Hunt, Noyes Publications, Park Ridge (NJ) 1990
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  • 5. P. Tomaszewski, On Jan Czochralski, Atut, Wrocław 2012 (in Polish, the English translation in preparation)
  • 6. Elementary Crystal Growth, Ed. K. Sangwal, Saan Publ., Lublin 1994
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  • 8. A.A. Wheeler, in: Handbook of Crystal Growth, Vol 1b. ed. D.T.J. Hurle, North-Holland, Amsterdam 1993, p. 683
  • 9. W.G. Pfann, Zone Melting, Wiley, New York 1958
  • 10. M. Ohwa, T. Higuchi, E. Toji, M. Watanabe, K. Homma, S. Takasu, in: Semiconductor Silicon, Eds. H.R. Huff, T. Abe, B. Kolbesen, The Electrochemical Society, Pennington, NJ 1986, p. 117
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  • 13. A. Bukowski, P. Zabierowski, W. Grzejszczyk, R. Nowak, Method of Obtaining the Silicon Single Crystals in the Czochralski Crystalization Device, Patent A1(21) 288359 (22) 90 12 20 5(51) C33B 15/00, 13.01.1994 (Polish patent)
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv124n210kz
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