Improved Czochralski Growth of Germanium Single Crystals from a Melt Covered by Boron Oxide

• Authors: T. Taishi , I. Yonenaga , K. Hoshikawa
• Languages of publication: EN

Abstracts

EN

In germanium (Ge) crystal growth, a serious problem in growing high quality Ge crystals is the formation of germanium-oxide-particles on the melt surface. In addition, B doping in Ge crystals is very difficult because of the segregation coefficient, which is greater than unity, and the instability of free B atoms in the Ge melt. We have found a unique solution, which is CZ-Ge crystal growth from a melt covered by boron oxide (B_2O_3). Ge crystals which are dislocation-free and/or oxygen-enriched can be grown by these improved CZ techniques. Current and planned research using such Ge crystals is introduced.

Keywords

EN

81.10.Fq; 61.72.Ff; 61.72.uf

Discipline

• 81.10.Fq: Growth from melts; zone melting and refining
• 61.72.Ff: Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
• 61.72.uf: Ge and Si

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 124
• Issue: 2
• Pages: 231-234

Dates

published

2013-08

Contributors

author

T. Taishi

• Faculty of Engineering, Shinshu University, Wakasato, Nagano 380-8553, Japan

author

I. Yonenaga

• Institute for Materials Research, Tohoku University, Katahira, Aoba-ku, Sendai, 980-8557, Japan

author

K. Hoshikawa

• Faculty of Engineering, Shinshu University, Wakasato, Nagano 380-8553, Japan

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Identifiers

DOI

10.12693/APhysPolA.124.231