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2013 | 124 | 2 | 231-234
Article title

Improved Czochralski Growth of Germanium Single Crystals from a Melt Covered by Boron Oxide

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EN
Abstracts
EN
In germanium (Ge) crystal growth, a serious problem in growing high quality Ge crystals is the formation of germanium-oxide-particles on the melt surface. In addition, B doping in Ge crystals is very difficult because of the segregation coefficient, which is greater than unity, and the instability of free B atoms in the Ge melt. We have found a unique solution, which is CZ-Ge crystal growth from a melt covered by boron oxide (B_2O_3). Ge crystals which are dislocation-free and/or oxygen-enriched can be grown by these improved CZ techniques. Current and planned research using such Ge crystals is introduced.
Keywords
EN
Contributors
author
  • Faculty of Engineering, Shinshu University, Wakasato, Nagano 380-8553, Japan
author
  • Institute for Materials Research, Tohoku University, Katahira, Aoba-ku, Sendai, 980-8557, Japan
author
  • Faculty of Engineering, Shinshu University, Wakasato, Nagano 380-8553, Japan
References
  • 1. J. Czochralski, Z. Phys. Chem. 92, 219 (1918)
  • 2. J.B. Mullin, B.W. Straugham, W.S. Brickell, J. Phys. Chem. Solids 26, 782 (1965)
  • 3. C. Hannig, G. Schwichtenberg, E. Buhrig, G. Gärtner, Mater. Sci. Eng. B 66, 97 (1999)
  • 4. A. Seidl, S. Eichler, T. Flade, M. Jurisch, A. Kohler, U. Kretzer, B. Weinert, J. Cryst. Growth 225, 561 (2000)
  • 5. W. Zulehner, D. Huber, Crystal Growth Properties and Applications, Ed. J. Grabmaier, Vol. 8, Springer Verlag, New York 1988, p. 1
  • 6. I. Yonenaga, T. Taishi, X. Huang, K. Hoshikawa, J. Appl. Phys. 89, 5788 (2001)
  • 7. M. Imai, K. Sumino, Philos. Mag. A 47, 599 (1983)
  • 8. I. Yonenaga, K. Sumino, J. Appl. Phys. 80, 734 (1996)
  • 9. B. Depuydt, M. Jonghe, W. Baets, Germanium-Based Technologies, Eds. C. Claeys, E. Simoen, Elsevier, Oxford (UK) 2007, p. 17
  • 10. B. Depuydt, A. Theuwis, I. Romandic, Mater. Sci. Semicond. Process. 9, 437 (2006)
  • 11. W. Guter, J. Schone, S.P. Philipps, M. Steiner, G. Siefer, A. Wekkeli, E. Welser, E. Oliva, A.W. Bett, F. Dimoroth, Appl. Phys. Lett. 94, 223504 (2009)
  • 12. T. Taishi, Y. Murao, Y. Ohno, I. Yonenaga, J. Cryst. Growth 311, 59 (2008)
  • 13. T. Taishi, Y. Ohno, I. Yonenaga, Thin Solid Films 518, 2409 (2010)
  • 14. T. Taishi, Y. Ohno, I. Yonenaga, J. Cryst. Growth 311, 4615 (2009)
  • 15. T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T. Ohsawa, I. Yonenaga, J. Cryst. Growth 360, 47 (2012)
  • 16. V.V. Litvinov, B.G. Svensson, L.I. Murin, J.L. Lindström, V.P. Markevich, A.R. Peaker, J. Appl. Phys. 100, 033525 (2006)
  • 17. T. Taishi, H. Ise, Y. Murao, T. Ohsawa, M. Suezawa, Y. Tokumoto, Y. Ohno, K. Hoshikawa, I. Yonenaga, J. Cryst. Growth 312, 2783 (2010)
  • 18. I. Barin, Thermochemical Data of Pure Substances, Part I and Part II, VCH, Weinheim 1989
  • 19. Y. Murao, T. Taishi, Y. Tokumoto, Y. Ohno, I. Yonenaga, J. Appl. Phys. 109, 113502 (2011)
  • 20. T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T. Ohsawa, Y. Tokumoto, Y. Ohno, I. Yonenaga, J. Phys. Conf. Ser. 281, 012011 (2011)
  • 21. I. Yonenaga, T. Taishi, H. Ise, Y. Murao, K. Inoue, T. Ohsawa, Y. Tokumoto, Y. Ohno, Y. Hashimoto, Physica B 407, 2932 (2012)
  • 22. K. Inoue, T. Taishi, Y. Tokumoto, Y. Murao, K. Kutsukake, Y. Ohno, I. Yonenaga, J. Appl. Phys. 113, 073501 (2013)
  • 23. P. Clauws, P. Vanmeerbeek, Physica B 273-274, 557 (1999)
  • 24. W. Kaiser, J. Phys. Chem. Solids 23, 255 (1962)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv124n209kz
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