Constitutional Supercooling in Czochralski Growth οf Heavily Doped Silicon Crystals

• Authors: J. Friedrich , L. Stockmeier , G. Müller
• Languages of publication: EN

Abstracts

EN

This study analyses the phenomenon of constitutional supercooling, which is one of the major problems in industrial growth of heavily doped (>10^{20} atoms/cm^3) silicon crystals by the Czochralski technique. The systematic study is based on theoretical models and experimental data considering the effect of three important dopants (B, P, and As) in dependence of the relevant growth parameters for the Czochralski process. Based on these results, conclusions will be drawn for the stability limits of the Czochralski growth of dislocation-free heavily doped silicon crystals in dependence of the doping species and their concentration.

Keywords

EN

81.10.Aj; 61.72.S-; 61.72.uf; 81.10.Fq

Discipline

• 81.10.Fq: Growth from melts; zone melting and refining
• 61.72.S-: Impurities in crystals
• 61.72.uf: Ge and Si
• 81.10.Aj: Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation(see also 61.50.Nw Crystal stoichiometry)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 124
• Issue: 2
• Pages: 219-226

Dates

published

2013-08

Contributors

author

J. Friedrich

• Fraunhofer THM, Am St.-Niclas-Schacht 13, 09599 Freiberg, Germany
• Fraunhofer Institut IISB, Schottkystr. 10, 91058 Erlangen, Germany

author

L. Stockmeier

• Fraunhofer THM, Am St.-Niclas-Schacht 13, 09599 Freiberg, Germany

author

G. Müller

• Fraunhofer Institut IISB, Schottkystr. 10, 91058 Erlangen, Germany

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Identifiers

DOI

10.12693/APhysPolA.124.219