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2013 | 124 | 2 | 219-226
Article title

Constitutional Supercooling in Czochralski Growth οf Heavily Doped Silicon Crystals

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Abstracts
EN
This study analyses the phenomenon of constitutional supercooling, which is one of the major problems in industrial growth of heavily doped (>10^{20} atoms/cm^3) silicon crystals by the Czochralski technique. The systematic study is based on theoretical models and experimental data considering the effect of three important dopants (B, P, and As) in dependence of the relevant growth parameters for the Czochralski process. Based on these results, conclusions will be drawn for the stability limits of the Czochralski growth of dislocation-free heavily doped silicon crystals in dependence of the doping species and their concentration.
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author
  • Fraunhofer THM, Am St.-Niclas-Schacht 13, 09599 Freiberg, Germany
  • Fraunhofer Institut IISB, Schottkystr. 10, 91058 Erlangen, Germany
author
  • Fraunhofer THM, Am St.-Niclas-Schacht 13, 09599 Freiberg, Germany
author
  • Fraunhofer Institut IISB, Schottkystr. 10, 91058 Erlangen, Germany
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Document Type
Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv124n207kz
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