Silicon Etching in XeF_2 Environment

• Authors: R. Knizikevičius
• Languages of publication: EN

Abstracts

EN

Enhancement of silicon etching rate in XeF_2 environment is considered by a proposed model, which includes processes of adsorption, activation, chemical reactions, relaxation, desorption, and sputtering. The enhancement of silicon etching rate is explained by considering hydrocarbon molecules from background gas contamination in the vacuum chamber, and assuming that hydrocarbon radicals enhance the etching rate. The composition of the adsorbed layer during silicon etching in XeF_2 environment is calculated. It is found that hydrocarbon radicals intensify reaction of XeF_2 molecules with Si atoms on the surface and that this changes the kinetics of the etching rate. Using the obtained theoretical results the difference in kinetics of the etching rates of first and subsequent run is explained.

Keywords

EN

81.65.Cf; 82.35.Gh; 82.65.+r

Discipline

• 82.35.Gh: Polymers on surfaces; adhesion(see also 68.35.Np Adhesion in surfaces and interfaces)
• 82.65.+r: Surface and interface chemistry; heterogeneous catalysis at surfaces(for temporal and spatial patterns in surface reactions, see 82.40.Np; see also 82.45.Jn Surface structure, reactivity and catalysis in electrochemistry; see also 68.43.-h Chemisorption/physisorption: adsorbates on surfaces)
• 81.65.Cf: Surface cleaning, etching, patterning(see also 52.77.Bn Etching and cleaning in physics of plasmas)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 124
• Issue: 1
• Pages: 137-140

Dates

published

2013-07

received

2011-02-09

revised

2013-03-11

(unknown)

2013-05-01

Contributors

author

R. Knizikevičius

• Department of Physics, Kaunas University of Technology, 73 K. Donelaičio St., LT-44029 Kaunas, Lithuania

References

• [1] J. Jeon, A.H. Ma, K. Khosraviani, A.M. Leung, in: 2007 Canadian Conf. Electrical and Computer Engineering, Vancouver, Institute of Electrical and Electronics Engineers, Vancouver 2007, p. 963
• [2] V.K. Brel, N.S. Pirkuliev, N.S. Zefirov, Russ. Chem. Rev. 70, 231 (2001)
• [3] B. Bahreyni, C. Shafai, J. Vac. Sci. Technol. A 20, 1850 (2002)
• [4] H.F. Winters, D.B. Graves, D. Humbird, S. Tougaard, J. Vac. Sci. Technol. A 25, 96 (2007)
• [5] R.C. Hefty, J.R. Holt, M.R. Tate, S.T. Ceyer, J. Chem. Phys. 129, 214701 (2008)
• [6] R.C. Hefty, J.R. Holt, M.R. Tate, S.T. Ceyer, J. Chem. Phys. 130, 164714 (2009)
• [7] P.G.M. Sebel, L.J.F. Hermans, H.C.W. Beijerinck, J. Vac. Sci. Technol. A 17, 755 (1999)
• [8] P. Verdonck, C.M. Hasenack, R.D. Mansano, J. Vac. Sci. Technol. B 14, 538 (1996)
• [9] T. Makino, H. Nakamura, M. Asano, J. Electrochem. Soc. 128, 103 (1981)
• [10] L.K. White, J. Maa, Appl. Phys. Lett. 46, 1050 (1985)
• [11] R. Knizikevičius, A. Galdikas, Lith. J. Phys. 41, 55 (2001)
• [12] R. Knizikevičius, Lith. J. Phys. 43, 135 (2003)
• [13] R. Knizikevičius, Vacuum 81, 230 (2006)
• [14] R. Knizikevičius, Microelectron. Eng. 86, 55 (2009)
• [15] J.W. Coburn, H.F. Winters, J. Appl. Phys. 50, 3189 (1979)
• [16] D. Humbird, D.B. Graves, J. Appl. Phys. 96, 791 (2004)
• [17] D. Humbird, D.B. Graves, J. Vac. Sci. Technol. A 23, 31 (2005)
• [18] F. Gou, A.W. Kleyn, M.A. Gleeson, Int. Rev. Phys. Chem. 27, 229 (2008)
• [19] Y. Fujikawa, S. Kuwano, K.S. Nakayama, T. Nagao, J.T. Sadovski, R.Z. Bahktizin, T. Sakurai, Y. Asari, J. Nara, T. Ohno, J. Chem. Phys. 129, 234710 (2008)
• [20] Y. Asari, J. Nara, T. Ohno, Surf. Sci. 605, 225 (2011)
• [21] M.J.M. Vugts, M.F.A. Eurlings, L.J.F. Hermans, H.C.W. Beijerinck, J. Vac. Sci. Technol. A 14, 2780 (1996)
• [22] J.L. Mauer, J.S. Logan, L.B. Zielinski, G.C. Schwartz, J. Vac. Sci. Technol. 15, 1734 (1978)
• [23] G.J.P. Joosten, M.J.M. Vugts, H.J. Spruijt, H.A.J. Senhorst, H.C.W. Beijerinck, J. Vac. Sci. Technol. A 12, 636 (1994)
• [24] P.G.M. Sebel, L.J.F. Hermans, H.C.W. Beijerinck, J. Vac. Sci. Technol. A 18, 2759 (2000)
• [25] R.A. Haring, A. Haring, F.W. Saris, A.E. de Vries, Appl. Phys. Lett. 41, 174 (1982)
• [26] R. Knizikevičius, Vacuum 79, 119 (2005)
• [27] H.F. Winters, D. Haarer, Phys. Rev. B 36, 6613 (1987)

Identifiers

DOI

10.12693/APhysPolA.124.137