Radiative Donor-Acceptor Pair Recombination in Tl_2Ga_2Se_3S Layered Single Crystals

• Authors: N. Gasanly
• Languages of publication: EN

Abstracts

EN

The emission band spectra of Tl_2Ga_2Se_3S layered crystals have been studied in the temperature range of 10-50 K and in the wavelength region of 540-700 nm. A broad photoluminescence band centered at 626 nm (1.98 eV) was observed at T=10 K. Variation of emission band has been studied as a function of excitation laser intensity in the 0.4-51.5 mW cm^{-2} range. The analysis of the spectra reveals that the peak energy position changes with laser excitation intensity (blue shift). This behavior of the emission band is in agreement with the idea of separation inhomogeneity of donor-acceptor pairs. Radiative transitions from the moderately deep donor level E_{d}=270 meV to the shallow acceptor level E_{a}=10 meV were suggested to be responsible for the observed photoluminescence band.

Keywords

EN

78.55.-m; 78.20.-e; 71.55.-i

Discipline

• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)
• 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)
• 71.55.-i: Impurity and defect levels

• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 124
• Issue: 1
• Pages: 128-132

Dates

published

2013-07

received

2013-03-14

Contributors

author

N. Gasanly

• Department of Physics, Middle East Technical University, 06800 Ankara, Turkey

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Identifiers

DOI

10.12693/APhysPolA.124.128